电子与封装
• 材料、器件与工艺 • 下一篇
张可可，赵金茹，周立鹏
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Study on the Temperature Effect of Tetramethylammonium Hydroxide Solution on Silicon Trench Etching
ZHANG Keke, ZHAO Jinru, ZHOU Lipeng
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摘要： 随着MEMS压力传感器应用领域的不断扩展，研究团队研究了压力传感器中关键的应力敏感薄膜刻蚀，进行了四甲基氢氧化铵溶液在不同温度条件下对硅槽刻蚀的试验，通过台阶测试仪、扫描电子显微镜等设备进行硅槽刻蚀表征测试，分析了温度对硅槽刻蚀速率、表面形貌、均匀性的影响，得出刻蚀温度在80 ℃时，最佳均匀性为0.039%，合格率达到92.67%的高平整度硅深槽结构的结论。
关键词: 压力传感器, 四甲基氢氧化铵, 硅槽结构, 湿法刻蚀
Abstract: The application of MEMS pressure sensors has become increasingly prevalent across various industries. This paper focuses on the research of etching stress-sensitive thin films in pressure sensors. Experiments were conducted to investigate the etching of silicon grooves using tetramethylammonium hydroxide (TMAH) solution at different temperatures. Characterization of the silicon groove etching was performed using a step profiler and scanning electron microscopy. The effects of temperature on the etching rate, surface morphology, and uniformity of the silicon grooves were analyzed. It was concluded that an etching temperature of 80 ℃ yielded the optimal uniformity of 0.039%, with a qualification rate of 92.67%, resulting in a highly flat deep silicon groove structure.
Key words: pressure sensor, TMAH, silicon groove structure, wet etching
张可可, 赵金茹, 周立鹏. 四甲基氢氧化铵溶液温度对硅槽刻蚀的研究[J]. 电子与封装, doi: 10.16257/j.cnki.1681-1070.2025.0115.
ZHANG Keke, ZHAO Jinru, ZHOU Lipeng.
Study on the Temperature Effect of Tetramethylammonium Hydroxide Solution on Silicon Trench Etching [J]. Electronics & Packaging, doi: 10.16257/j.cnki.1681-1070.2025.0115.
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链接本文: https://ep.org.cn/CN/10.16257/j.cnki.1681-1070.2025.0115
