关键词: 超势垒整流器, 热特性, 非钳位感性负载开关, 短路能力

Abstract: A computer-aided software (TCAD) is used to analyze the thermal characteristics of symmetric SiC MOS devices (DT- SBR-MOS) and asymmetric SiC MOS devices (AT-SBR-MOS) with integrated super barrier rectifiers (SBR), the unclamped inductive load switching (UIS) process and the short circuit (SC) capability to reveal the dynamic reliability mechanism of the two new SiC MOS devices. UIS process and SC capability are analyzed to reveal the dynamic reliability mechanism of the two new types of SiC MOS devices, and to make up for the lack of reliability studies on SiC MOS devices. The results show that the reverse conduction thermal resistance of AT-SBR-MOS is 17% lower than that of DT-SBR-MOS under the same input power condition due to the different SBR structure. In the single-pulse test, the avalanche tolerance energy of AT-SBR-MOS is 11% higher than that of DT-SBR-MOS due to the semi-enclosed P-well region of AT-SBR-MOS which enhances the depletion of the N-type drift region. In addition, the short-circuit withstand time of AT-SBR-MOS is improved by 2 µs due to its smaller current flow path than that of DT-SBR-MOS. The comprehensive data show that the reverse conduction thermal characteristics, avalanche tolerance, and short-circuit withstand performance of AT-SBR-MOS are better than that of DT-SBR-MOS, which provides an important reference for the design of high-performance SiC power devices

Key words: super barrier rectifier, thermal property, unclamped inductive switching, short circuit