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电子与封装

• 电路与系统 •    下一篇

一种高电源抑制无片外电容LDO设计

翟闯1,2,王俊峰1,2   

  1. 1. 南京邮电大学集成电路科学与工程学院,南京  210023;2. 南京宇都通讯科技有限公司,南京  210046
  • 收稿日期:2025-12-27 修回日期:2026-01-13 出版日期:2026-03-17 发布日期:2026-03-17
  • 通讯作者: 王俊峰

High Power Supply Rejection LDO Design Without External Capacitors

ZHAI Chuang 1,2, WANG Junfeng 1,2   

  1. 1. College of Integrated Circuit Science and Engineering of Nanjing University of Posts and Telecommunications, Nanjing 210023, China; 2. Nanjing Yudu Communication Technology Co., Ltd., Nanjing 210046, China
  • Received:2025-12-27 Revised:2026-01-13 Online:2026-03-17 Published:2026-03-17

摘要: 为了满足锁相环(PLL)、压控振荡器(VCO)、低噪声放大器(LNA)等对供电模块电源噪声抑制能力的需求,基于前馈纹波消除技术,设计了一款超宽带无片外电容低压差线性稳压器(LDO)。采用带隙基准电路产生参考电压;误差放大器使用交叉耦合的对称型运放架构,并提出了一种新型的前馈纹波耦合电路,利用求和运算放大器将纹波输送到功率管栅端,以超级源随器作为缓冲器来驱动功率管的栅端。电路基于SMIC 55 nm 工艺设计,频率补偿仅需要2.02 pF的电容,实现了工作电压范围1.7 V~2.4 V,输出电压为1.5 V,最大负载电流为50 mA。仿真结果表明,满载时在1 MHz能获得大于47 dB的电源抑制,与未使用前馈纹波技术相比,最高可在1 MHz处获得25 dB的提升,单位增益带宽为150 MHz,当负载电流以5 μs从1 mA切换到50 mA时,上下冲电压为2.5 mV、1.5mV。

关键词:

前馈纹波消除技术, 高电源抑制, 无片外电容低压差线性稳压器, 带隙基准, 求和放大器

Abstract: In order to meet the requirements for power supply noise suppression of components such as phase-locked loops (PLL), voltage-controlled oscillators (VCO), and low-noise amplifiers (LNA), a ultra-wideband low-dropout linear regulator (LDO) without external capacitors was designed based on feedforward ripple cancellation technology. A bandgap reference circuit is used to generate the reference voltage; the error amplifier employs a cross-coupled symmetrical operational amplifier architecture, and a novel power ripple coupling circuit is designed, which delivers the ripple to the gate of power transistor via a summing operational amplifier, using a super source follower as the buffer to drive the gate of the power transistor. The circuit is designed based on the SMIC 55 nm process and requires only 4.02 pF capacitance for frequency compensation, achieving an operating voltage range of 1.7 V–2.4 V, an output voltage of 1.5 V, and a maximum load current of 50 mA. Simulation results show that under full load, a power supply rejection greater than 47 dB can be achieved at 1 MHz. Compared with not using the feedforward ripple technique, an improvement of up to 25 dB can be obtained at 1 MHz. The unity-gain bandwidth is 150 MHz, and when the load current switches from 1 mA to 50 mA within 5 μs, the voltage overshoot and undershoot are 2.5 mV and 1.5 mV, respectively.

Key words: FFRC technique, high PSR, capless LDO, bandgap, summing amplifier