关键词: 绝缘栅触发晶闸管, 高脉冲电流密度, 单位面积峰值脉冲电流, 单位面积电流上升率

Abstract: Insulated-gate trigger thyristors (IGTTs) are currently widely employed as core pulse switching devices in electronic fuse technology for explosive foil initiation, owing to their advantages such as simple driving requirements, high overcurrent capability, and high current rise rate. To ensure reliable initiation, the operating voltage of the switching device needs to be increased. However, as the operating voltage rises, the increase in junction termination size leads to a reduction in the active area of the chip, thereby restricting the development of the device toward high pulse current density. In this paper, the junction termination structure of a 2 000 V IGTT is optimized by improving the field limiting ring process and using the Medici TCAD simulation tool. Meanwhile, the cell structure is optimized and the backside process is improved, realizing an IGTT device structure with high voltage rating and high pulse current density. Experimental results show that at the same 2 000 V voltage rating, compared with the conventional device structure, the optimized structure reduces the total chip area by 57%, increases the peak pulse current per unit area I_peak by 112%, and enhances the current rise rate per unit area dI/(dt·dS) by 122%.

Key words: insulated-gate trigger thyristors, high pulse current density, peak pulse current per unit area, current rise rate per unit area