关键词: GaN HEMT, 宽带, 内匹配, Lange桥

Abstract: The paper researches the S-band broadband power GaN internal matching technology. The radio frequency parameter of the GaN high electron mobility transistor (HEMT) device is determined by the Loadpull system to achieve high-power and high-efficiency impedance matching. The matching circuit used a high-agency constant board to make and combines the GaN process to achieve the miniaturization and high performance of the amplifier. The internally matched power device demonstrates a pulse output power of more than 350 W with the power gain of over 14 dB and drain efficiency of over 62% across the band of 2.7-3.5 GHz, at operating drain bias voltage of 43 V, 100us pulse-width and 15% duty-cycle. And the maximum pulsed output power of 389 W with PAE of 69%. Based on the high-efficiency and low thermal dissipation performance of this power amplifier, the reliability of high-power amplifiers under high-voltage conditions has been demonstrated.

Key words: GaN HEMT, broadband, internal matching, Lange bridge