基于二维材料的导电桥接存储器研究进展

doi:10.16257/j.cnki.1681-1070.2027.0028

电子与封装

• • 下一篇

基于二维材料的导电桥接存储器研究进展

魏轶聃^1,2，肖志强^1,2,3，刘国柱^1,2,3，魏敬和^1,2,3，李少敏⁴，魏应强^1,2，赵伟^1,2,3，杨瀚^1,2，孙艺^1,2，刘志超^1,2，隋志远^1,2，滕浩然^1,2

1. 中国电子科技集团公司第五十八研究所，江苏无锡 214035；2. 集成电路与微系统全国重点实验室，江苏无锡 214035；3. 空天集成电路与微系统工信部重点实验室，南京 211106；4. 江南大学集成电路学院，江苏无锡 214122

收稿日期:2026-05-24 修回日期:2026-06-16 出版日期:2026-07-17 发布日期:2026-07-17
通讯作者: 魏轶聃
基金资助:
国家自然科学基金（U24B6015、62174150、62204233）；江苏省揭榜挂帅项目（BE2023005）

Research Progress on Conducting Bridge Random Access Memory Based on Two Dimensional Materials

WEI Yidan^1,2, XIAO Zhiqiang^1,2,3, LIU Guozhu^1,2,3, WEI Jinghe^1,2,3, LI Shaomin⁴, WEI Yingqiang^1,2, ZHAO Wei^1,2,3, YANG Han^1,2, SUN Yi^1,2, LIU Zhichao^1,2, SUI Zhiyuan^1,2, TENG Haoran^1,2

1. China Electronics Technology Group Corporation No. 58 Research Institute, Wuxi 214035, China; 2. National Key Laboratory of Integrated Circuits and Microsystems, Wuxi 214035, China; 3. Key Laboratory of Aerospace Integrated Circuits and Microsystem, Ministry of Industry and Information Technology, Nanjing 211106, China; 4. School of Integrated Circuits, Jiangnan University, Wuxi 214122, China

Received:2026-05-24 Revised:2026-06-16 Online:2026-07-17 Published:2026-07-17

摘要/Abstract

摘要： 针对传统导电桥接存储器（CBRAM）中器件一致性差、微缩后缺陷加剧等问题，综述了二维材料在CBRAM器件中的研究进展，详细介绍其垂直型、平面型两种核心结构及电形成（FORMING）、置位（SET）、复位（RESET）工作流程，对比机械剥离、化学气相沉积等二维材料制备工艺，分析不同工艺制备方法的优势和局限性；比较了基于不同二维材料的CBRAM器件性能，并给出了性能优化方法，分析了不同二维材料结构与其抗辐射特性，为基于二维材料的CBRAM器件性能优化和空间应用奠定理论和技术基础。

关键词: CBRAM, 器件结构, 工艺方法, 性能评估, 抗辐射特性

Abstract: Aiming at the problems of conventional CBRAM devices such as poor uniformity and aggravated defects after scaling, the application value of two-dimensional materials in such devices is discussed. Two structures, vertical and planar, are introduced, together with their operation mechanisms including FORMING, SET and RESET processes. The fabrication process of two-dimensional materials such as mechanical exfoliation and chemical vapor deposition are compared, and their advantages and limitations are analyzed. The performance of CBRAM devices based on different two-dimensional materials is compared, and corresponding performance optimization strategies are provided. The relationship between different two-dimensional material structures and their radiation resistance is analyzed, which lays a theoretical and technical foundation for the performance optimization and space applications of two-dimensional-material-based CBRAM devices.

Key words: CBRAM, device structure, fabrication process, performance evaluation, radiation hardness

魏轶聃1, 2, 肖志强1, 2, 3, 刘国柱1, 2, 3, 魏敬和1, 2, 3, 李少敏4, 魏应强1, 2, 赵伟1, 2, 3, 杨瀚1, 2, 孙艺1, 2, 刘志超1, 2, 隋志远1, 2, 滕浩然1, 2. 基于二维材料的导电桥接存储器研究进展[J]. 电子与封装, doi: 10.16257/j.cnki.1681-1070.2027.0028.

WEI Yidan1, 2, XIAO Zhiqiang1, 2, 3, LIU Guozhu1, 2, 3, WEI Jinghe1, 2, 3, LI Shaomin4, WEI Yingqiang1, 2, ZHAO Wei1, 2, 3, YANG Han1, 2, SUN Yi1, 2, LIU Zhichao1, 2, SUI Zhiyuan1, 2, TENG Haoran1, 2. Research Progress on Conducting Bridge Random Access Memory Based on Two Dimensional Materials[J]. Electronics & Packaging, doi: 10.16257/j.cnki.1681-1070.2027.0028.

中国电子学会电子制造与封装技术分会会刊

中国半导体行业协会封测分会会刊

无锡市集成电路学会会刊

基于二维材料的导电桥接存储器研究进展

Research Progress on Conducting Bridge Random Access Memory Based on Two Dimensional Materials

PDF

可视化

摘要/Abstract

引用本文

使用本文

参考文献

相关文章 0

编辑推荐

Metrics

本文评价