关键词: 相变存储器, 疲劳特性, Ge2Sb2Te5, 晶体结构

Abstract: Phase change memory has long deemed as the most promising mainstream non-volatilememory replacing flash for its lower operation voltage，fast read speed and compatibility with standard CMOS process. The phase change materials may suffer volume shrinkage that significantly affects reliability.In the paper，the endurance and the microstructure of phase change material are studied by high-resolution transmission electron microscopy and Fast Fourier Transform method.The unevenness at the interface between bottom electrode and phase change materials may incur distinct volume shrinkage and cause detachment of phase change materials. Obviously，the contactsurface conditionisverymuchaffectingthe endurance propertyofdevices.

Key words: phase change memory, endurance property, Ge2Sb2Te5, crystal structure