中国半导体行业协会封装分会会刊

中国电子学会电子制造与封装技术分会会刊

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电子与封装 ›› 2018, Vol. 18 ›› Issue (9): 36 -38. doi: 10.16257/j.cnki.1681-1070.2018.0101

• 微电子制造与可靠性 • 上一篇    下一篇

一种抗单粒子瞬态辐射效应的自刷新三模冗余触发器设计

曹 靓,田海燕,王 栋   

  1. 中国电子科技集团第五十八研究所,江苏 无锡 214072
  • 收稿日期:2018-04-23 出版日期:2018-09-20 发布日期:2018-09-20
  • 作者简介:曹 靓(1984—),男,江苏无锡人,毕业于东南大学,工程师,现就职于中国电子科技集团公司第五十八研究所,主要从事抗辐照FPGA等电路设计工作。

Design of Single-Event Transient Hardened Triple Modular Redundancy Flip-flop with Self-refresh

CAO Liang, TIAN Haiyan, WANG Dong   

  1. China Electronics Technology Group Corporation No.58 Research Institute, Wuxi 214072, China
  • Received:2018-04-23 Online:2018-09-20 Published:2018-09-20

摘要: 数字集成电路在宇宙空间中会受到单粒子效应的影响,随着半导体工艺的进步,器件尺寸不断缩小,单粒子效应也越发显著。单粒子瞬态脉冲对电路的影响随着电路工作主频越来越高也变得越发严重,甚至可能使电路功能完全失效。在自刷新三模冗余触发器设计的基础上,进行了抗单粒子瞬态辐射效应加固设计,增强了原设计的自刷新三模冗余触发器的抗单粒子瞬态脉冲的能力,为以后研制抗辐射数字电路奠定了基础,提供了良好的借鉴。

关键词: 单粒子瞬态脉冲, 抗辐射加固, 触发器, 三模冗余

Abstract: With the development of semiconductor technology and the shrinking of the process size, the single-event effects on digital integrated circuits used in space become more and more obvious. Especially when the working frequency is high, single-event transient on the circuit is very serious, and may even cause failure of the circuit function. This paper introduces an improve design of TMR (Triple Modular Redundancy) flip-flop with self-refresh. The ability to withstand single-event transient of the original flip-flop design is improved. This work supplies a good technologic base for design of radiation hardened digital logic in the future.

Key words: single-event transient, radiation hardness, flip-flop, triple modular redundancy

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