关键词: ESD；GGNMOS；GGNMOS+RC Power Clamp结构

Abstract: ESD ( Electrostatic Discharge, ESD ) refers to the limited charge transfer between two objects of different potential, thus caused by the Discharge phenomenon. The instantaneous high voltage and current generated by ESD will burn the devices in the semiconductor and eventually lead to the permanent failure of the entire semiconductor chip. With the continuous progress of silicon based CMOS technology, the failure problem caused by ESD is becoming more and more serious with the reduction of characteristic size. This paper analyzes several common electrostatic discharge modes and test models, then optimizes a GGNMOS+RC Power Clamp anti-esd structure on the basis of the traditional GGNMOS anti-radiation ESD structure based on the 0.18μm BCD process of SMIC. It is proved that this circuit has strong ESD resistance capability and stable performance after the flow test.

Key words: ESD; GGNMOS; GGNMOS+RC Power Clamp