亚阈电流对MOS栅控晶闸管dV/dt抗性的影响

doi:10.16257/j.cnki.1681-1070.2020.0808

电子与封装 ›› 2020, Vol. 20 ›› Issue (8): 080402 . doi: 10.16257/j.cnki.1681-1070.2020.0808

亚阈电流对MOS栅控晶闸管dV/dt抗性的影响

周琪钧¹，田冕²，刘超¹，陈万军¹

1. 电子科技大学电子薄膜与集成器件国家重点实验室，成都 610054;2. 陆军装备部驻重庆地区军事代表局驻成都地区第二军事代表室，成都 610054

接受日期:2020-03-09 出版日期:2020-08-25 发布日期:2020-04-16
作者简介:周琪钧（1992—），男，四川绵阳人，电子科技大学硕士研究生，研究方向为新型功率半导体器件与集成电路和系统。

Effect of Sub-threshold Current on dV/dt Immunity of MOS-Controlled Thyristor

ZHOU Qijun¹, TIAN Mian², LIU Chao¹, CHEN Wanjun¹

1. State Key Laboratory of Electronic Thin Film and Integrated Devices of University of Electronic Science and Technology of China, Chengdu 610054, China；2.The Second Military Representative Office in Chengdu of the Chongqing Military Representative Bureau of the Army Equipment Department, Chengdu 610054, China

Accepted:2020-03-09 Online:2020-08-25 Published:2020-04-16

摘要/Abstract

摘要： 针对MOS栅控晶闸管（MCT）在电容储能型脉冲功率系统中，面临高电压变化率（dV/dt）而导致的误开启现象，首次通过实验和仿真研究了亚阈电流对MOS栅控晶闸管dV/dt抗性的影响，分析了亚阈电流对器件dV/dt抗性的影响机制。研究结果表明，亚阈电流的参与是引起器件dV/dt抗性降低的重要原因，这为提高器件dV/dt抗性设计提供了理论指导。

关键词: 脉冲功率系统, MOS栅控晶闸管, dV/dt, 亚阈电流

Abstract: The MOS-controlled thyristor (MCT) has a problem of false triggering caused by a high voltage change rate (dV/dt) in the capacitor energy pulse power system. In this paper, the effect of sub-threshold current on dV/dt immunity of MOS-controlled thyristor (MCT) is studied for the first time through experiments and simulations, and the effect mechanism of sub-threshold current on dV/dt immunity of the device is analyzed. The research results show that the participation of sub-threshold current is an important reason for reducing the dV/dt immunity of the device, which provides theoretical guidance for the design of improving the dV/dt immunity of the device.

Key words: 脉冲功率系统；MOS栅控晶闸管；dV/dt；亚阈电流

中图分类号:

TN306

周琪钧，田冕，刘超，陈万军. 亚阈电流对MOS栅控晶闸管dV/dt抗性的影响[J]. 电子与封装, 2020, 20(8): 080402 .

ZHOU Qijun, TIAN Mian, LIU Chao, CHEN Wanjun. Effect of Sub-threshold Current on dV/dt Immunity of MOS-Controlled Thyristor[J]. Electronics & Packaging, 2020, 20(8): 080402 .

[1]	袁榕蔚;刘超;陈万军. 基于导通延迟补偿的并联MOS栅控晶闸管均流方法研究[J]. 电子与封装, 2021, 21(7): 70403-.
[2]	张兴强，陈楠，陈万军. 一种基于CS-MCT串联的脉冲放电电路设计与实现[J]. 电子与封装, 2020, 20(7): 70305-.
[3]	刘亚伟，陈万军. MOS栅控晶闸管在超高di/dt应用中的失效分析[J]. 电子与封装, 2018, 18(7): 45-48.

中国半导体行业协会封装分会会刊

中国电子学会电子制造与封装技术分会会刊

亚阈电流对MOS栅控晶闸管dV/dt抗性的影响

Effect of Sub-threshold Current on dV/dt Immunity of MOS-Controlled Thyristor

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