MRAM空间粒子辐射效应关键技术研究

doi:10.16257/j.cnki.1681-1070.2021.0411

摘要/Abstract

摘要： 磁性随机存储器（MRAM）以其天然的抗辐射特性逐渐成为宇航电子系统的核心元器件之一。围绕MRAM空间粒子辐射效应关键技术，对MRAM辐射效应的研究背景、物理机制、研究方法等内容进行了论述。目前对MRAM的辐射效应研究主要集中在对商用MRAM芯片的辐射性能进行辐射实验评价，评价内容主要包括质子、中子、γ射线等空间粒子对芯片存储数据翻转率的影响。借助于TEM、AFM、XRR及探针等技术对辐射前后的磁隧道结（MTJ）的界面态进行表征，探究离子辐射对MTJ内部结构的影响，揭示出辐射损伤物理机制。除了辐射实验及电镜表征外，通过创建MTJ的电路或TCAD模型，模拟外围读写电路的辐射效应，可以实现整个MRAM芯片的抗辐射性能评估，同时也可以降低重复试验的成本，提高研究效率。

关键词: 磁性随机存储器, 辐射效应, 电学表征, 器件模型, 电路仿真

Abstract: Magnetic random memory (MRAM) has gradually become one of the core components of aerospace electronic system due to its natural radiation resistance. Based on the research on the key technologies of MRAM space particle radiation effect, this paper discusses the background, physical mechanism and research methods of MRAM radiation effect. The current research on the radiation effect of MRAM is mainly focused on the radiation experimental evaluation of the radiation performance of commercial MRAM chips. The evaluation contents mainly include the influence of proton, neutron, γ ray and other spatial particles on the turnover rate of chip memory data. The interface states of the magnetic tunnel junction (MTJ) before and after radiation are characterized by means of TEM, AFM, XRR and probe techniques, and the influence of ion radiation on the internal structure of MTJ is investigated. The radiation resistance evaluation of the whole MRAM chip can be realized by creating MTJ circuit or TCAD model to simulate the radiation effect of peripheral read and write circuit in addition to radiation experiment and electron microscope characterization. At the same time, it can also reduce the cost of repeated experiments and improve the research efficiency.

Key words: magneticrandommemory, radiationeffect, electricalcharacterization, devicemodel, circuitsimulation

中图分类号:

TN306

杨茂森;周昕杰;陈瑶. MRAM空间粒子辐射效应关键技术研究[J]. 电子与封装, 2021, 21(4): 040403 .

YANG Maosen, ZHOU Xinjie, CHEN Yao. Study on the KeyTechnologies of Space Particles Radiation Effects of MRAM[J]. Electronics & Packaging, 2021, 21(4): 040403 .

参考文献

[2] ZHAO X, Mei B, BI J S, et al. Single event transients in a 0.18 μm partially-depleted silicon-on-insulator complementary metal oxide semiconductor circuit[J]. Acta Physica Sinica, 2015, 64(13):136102.
[3] HERRERA-ALZU I, LOPEZ-VALLEJO M. Design techniques for Xilinx Virtex FPGA configuration memory scrubbers[J]. IEEE Transactions on Nuclear Science, 2013, 60(1):376-385.
[4] SHAH J S, NAIRN D, SACHDEV M. A 32 kb macro with 8T soft error Robust, SRAM cell in 65-nm CMOS[J]. IEEE Transactions on Nuclear Science, 2015, 62(3):1-8.
[5] NOGUCHI H, IKEGAMI K, KUSHIDA K, et al. 7.5 A 3.3 ns-access-time 71.2 μW/MHz 1 Mb embedded STT-MRAM using physically eliminated read-disturb scheme and normally-off memory architecture[C]. 2015 IEEE International Solid-State Circuits Conference(ISSCC), Feb. 22-26, 2015, San Francisco, CA, USA. New York: IEEE, 14999463.
[6] DIENY B, SOUSA R, BANDIERA S, et al. Extended scalability and functionalities of MRAM based on thermally assisted writing[C]. 2011 IEEE International Electron Devices Meeting (IEDM), Dec. 5-7, 2011, Washington, DC, USA. New York: IEEE, 15938441.
[7] REN F, JANDER A, DHAGAT P, et al. Radiation tolerance of magnetic tunnel junctions with MgO tunnel barriers[J]. IEEE Transactions on Nuclear Science, 2012, 59(6):3034-3038.
[8] KOBAYASHI D, KAKEHASHI Y, HIROSE K, et al. Influence of heavy ion irradiation on perpendicular-anisotropy CoFeB-MgO magnetic tunnel junctions[J]. IEEE Transactions on Nuclear Science, 2014, 61(4):1710-1716.
[9] ANDRE T W, NAHAS J J, SUBRAMANIAN C K, et al. A 4-Mb 0.18-μm 1T1MTJ toggle MRAM with balanced three input sensing scheme and locally mirrored unidirectional write drivers[J]. IEEE Journal of Solid-State Circuits, 2005, 40(1): 301-309.
[10] YUASA S, NAGAHAMA T, FUKUSHIMA A, et al. Giant room-temperature magnetoresistance in single-crystal Fe/MgO/Fe magnetic tunnel junctions[J]. Nature Materials, 2004, 3(12): 868-871.
[11] MONSMA D J, PARKIN S S P. Spin polarization of tunneling current from ferromagnet- /Al2O3 interfaces using copper-doped aluminum superconducting films[J]. Applied Physics Letters, 2000, 77(5): 720-722.
[12] BUTLER W H, ZHANG X G, SCHULTHESS T C, et al. Spin-dependent tunneling conductance of Fe/MgO/Fe sandwiches[J]. Physical Review B, 2001, 63(5): 054416.
[13] BANERJEE T, SOM T, KANJILAL D, et al. Effect of ion irradiation on the characteristics of magnetic tunnel junctions[J]. European Physical Journal Applied Physics, 2005, 32(2): 115-118.
[14] CONRAUX Y, NOZIERES J P, COSTA V D, et al. Effects of swift heavy ion bombardment on magnetic tunnel junction functional properties[J]. Journal of Applied Physics, 2003, 93(10): 7301-7303.
[15] SCHMALHORST J, REISS G. Transport properties of magnetic tunnel junctions with ion irradiated AlOx barriers[J]. Journal of Magnetism and Magnetic Materials, 2004, 272-276: E1485-E1486.
[16] SACHER M D, SAUERWALD J, SCHMALHORST J, et al. Influence of noble-gas ion irradiation on alumina barrier of magnetic tunnel junctions[J]. Journal of Applied Physics, 2005, 98(10): 103532.
[17] QI X J, WANG Y G, YAN J, et al. Influence of Ga1 ion irradiation on thermal relaxation of exchange bias field in the IrMn-based magnetic tunnel junctions[J]. Solid State Commun, 2010, 150(35-36): 1693-1697.
[18] SCHMALHORST J, REISS G. Temperature and bias-voltage dependent transport in magnetic tunnel junctions with low energy Ar-ion irradiated barriers[J]. Physical review B, Condensed matter,2003, 68(22):224437.
[19] HUGHES H, BUSSMANN K, MCMARR P J, et al. Radiation studies of spin-transfer torque materials and devices[J]. IEEE Transactions on Nuclear Science, 2012, 59(6), 3027-3033.
[20] REN F H, JANDER A, DHAGAT P, et al. Radiation tolerance of magnetic tunnel junctions with MgO tunnel barriers[J]. IEEE Transactions on Nuclear Science, 2012, 59(6): 3034-3038.
[21] KOBAYASHI D, KAKEHASHI Y, HIROSE K, et al. Influence of heavy ion irradiation on perpendicular-anisotropy CoFeB-MgO magnetic tunnel junctions[J]. IEEE Transactions on Nuclear Science, 2014, 61(4):1710-1716.
[22] SNOECK E, BAULES P, BENASSAYAG G, et al. Modulation of interlayer exchange coupling by ion irradiation in magnetic tunnel junctions[J]. Journal of Physics: Condensed Matter, 2008, 20(5): 055219.
[23] GIBAUD A, HAZRA S. X-ray reflectivity and diffuse scattering[J]. Current Science, 2000, 78(12): 1467-1477.
[24] IKEDA S, MIURA K, YAMAMOTO H, et al. A perpendicular-anisotropy CoFeB-MgO magnetic tunnel junction[J]. Nature Materials, 2010, 9(9):721-724.
[25] PANG T T, KANG W, RAN Y, et al. Nonvolatile radiation hardened DICE latch[C]. 2015 15th Non-Volatile Memory Technology Symposium (NVMTS), Oct. 12-14, 2015, Beijing, China. New York: IEEE, 15938441.

[1]	赵正平. FinFET/GAAFET/CFET纳电子学的研究进展[J]. 电子与封装, 2024, 24(8): 80401-.
[2]	陈锡鑫;殷亚楠;高熠;郭刚;陈启明. 65 nm工艺SRAM中能质子单粒子效应研究[J]. 电子与封装, 2023, 23(7): 70403-.
[3]	高熠;陈瑶;吕伟;赵铭彤;王茂成. 28 nm工艺触发器中能质子单粒子效应研究[J]. 电子与封装, 2023, 23(6): 60401-.
[4]	李嘉威;吴楚彬;王超;孙杰杰;杨霄垒;赵桂林. 应用于STT-MRAM存储器的高可靠灵敏放大器设计[J]. 电子与封装, 2023, 23(4): 40306-.
[5]	殷亚楠;王玧真;邱一武;周昕杰;郭刚. 纳米器件单粒子瞬态仿真研究^*[J]. 电子与封装, 2022, 22(7): 70404-.
[6]	刘超铭;王雅宁;魏轶聃;王天琦;齐春华;张延清;马国亮;刘国柱;魏敬和;霍明学. SiC功率器件辐照效应研究进展[J]. 电子与封装, 2022, 22(6): 60101-.
[7]	吴素贞;徐政;徐海铭;宋思德;谢儒彬;洪根深;吴建伟;贺琪. MIS型GaN HEMT器件的X-ray辐射总剂量效应研究[J]. 电子与封装, 2020, 20(12): 120403-.
[8]	周昕杰，陈　瑶，花正勇，殷亚楠，郭　刚，蔡　丽. TCAD结合SPICE的单粒子效应仿真方法[J]. 电子与封装, 2019, 19(4): 32-35.

中国半导体行业协会封装分会会刊

中国电子学会电子制造与封装技术分会会刊