关键词: 高压开关, 漏电失效, 系统结构

Abstract: High voltage analog switch plays a key role in modern ultrasonic field. Performance indicators such as transmission speed, conductive resistance and channel isolation are sonsidered comprehensively. The problem of circuit leakage failure is solved by infrared thermal imaging technology. The method includes infrared thermal imaging, leadkage failure analysis, leakage testing, device principle analysis and leakage solutions. A general solution for leakage failure of high voltage analog switching devices is presented. It is of great significance to solve the leakage failure problem of high voltage analog switch. In addition, the method analyzes the internal process structure of the device, the essential factor of leakage failure is found. It has some guiding significance for the subsequent improvement of device process structure.

Key words: highvoltageswitch, leakagefailure, systemstructure