关键词: 辐射效应, 单粒子效应, 中能质子, SRAM

Abstract: Based on a 65 nm bulk silicon CMOS SRAM with error detection and correction (EDAC), a research of the effect of intermediate energy proton on single event effect of nanoscale integrated circuits is conducted.Two sets of experimental results are obtained in SRAM intrinsic operation mode and EDAC mode. Analyzing the experimental data, it is found that in both the heavy ion and medium energy proton tests, the single event latch-up is not occurred with the 6T cell in commercial design rules, but the single-particle multi-bit flip-flop is happened in experiments.The number of errors caused by the proton single event effect is saturated, while the number of errors caused by the heavy ion single event effect is increasing with energy, and this phenomenon is related to the mechanism of the single event effect caused by the two particles. The saturation cross is different between proton and heavy ions, due to probability of atomic nucleus reaction, but the error rate is similar to each other. This experiment has well explored the effect of intermediate energy protons on SRAM circuits, the similarities and differences between protons and heavy ions leading to single-particle errors are clarified, and the foundation for SRAM applications in space is laid.

Key words: radiation effect, single event effect, intermediate energy proton, SRAM