中国半导体行业协会封装分会会刊

中国电子学会电子制造与封装技术分会会刊

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电子与封装 ›› 2021, Vol. 21 ›› Issue (8): 080303 . doi: 10.16257/j.cnki.1681-1070.2021.0817

• 电路设计 • 上一篇    下一篇

基于0.18 μm加固工艺的抗辐射单元库开发

姚进;左玲玲;周晓彬;刘谆;周昕杰   

  1. 中科芯集成电路有限公司,江苏 无锡 214072
  • 收稿日期:2021-06-15 出版日期:2021-08-11 发布日期:2021-07-19
  • 作者简介:姚进(1982—),男,江苏泰兴人,硕士,工程师,主要从事抗辐射单元库及IP设计。

Radiation HardenedLibrary Development Based on 0.18μmCMOS Radiation-Hardening Process

YAO Jin, ZUO Linlin, ZHOU Xiaobin, LIU Zhun, ZHOU Xinjie   

  1. China Key System & Integrated Circuit Co., Ltd., Wuxi 214072, China
  • Received:2021-06-15 Online:2021-08-11 Published:2021-07-19

摘要: 抗辐射单元库是快速完成抗辐射数字电路设计的基础。基于0.18 μm加固工艺总剂量及单粒子效应加固策略,从单元库规格制定、逻辑与版图设计、单元库特征参数提取及布局布线文件抽取、单元库设计套件质量保证到最终硅验证,完成了抗辐射单元库的全流程开发。抗辐射单元库在速度、面积、功耗及抗辐射性能4个方面表现出良好的均衡性,具有广泛的应用前景。

关键词: 标准单元库, 抗辐射, 单元库验证

Abstract: Radiation hardened library is the basis of fast radiation hardened digital circuit design. Based on radiation hardened strategy of total ionizing dose and single event effect in 0.18 μm CMOS radiation-hard process, through the library specification making, logic and layout design, cell characterization and automatic place and route file abstract, library design kit quality assurance to final silicon verification, the whole process development of radiation harden library is realized. The radiation harden library achieves a good balance in speed, area, power and radiation harden performance, and it has a wide application prospect.

Key words: standardcelllibrary, radiationhardened, libraryverification

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