辐照源对LVMOS器件总剂量辐射电离特性的影响*

doi:10.16257/j.cnki.1681-1070.2022.0715

电子与封装 ›› 2022, Vol. 22 ›› Issue (7): 070405 . doi: 10.16257/j.cnki.1681-1070.2022.0715

辐照源对LVMOS器件总剂量辐射电离特性的影响^*

陶伟;刘国柱;宋思德;魏轶聃;赵伟

中国电子科技集团公司第五十八研究所，江苏无锡 ?214072

收稿日期:2022-04-13 出版日期:2022-07-28 发布日期:2022-05-24
作者简介:陶伟（1978—），男，江苏盐城人，硕士，高级工程师，主要研究方向为抗辐射超大规模集成电路；

Influence of IrradiationSource on Total Ionizing Dose Characteristics of LVMOS Devices

TAO Wei, LIU Guozhu, SONG Side, WEI Yidan, ZHAO Wei

The 58th Institute of China Electronics Technology Group Corporation, Wuxi 214072, China

Received:2022-04-13 Online:2022-07-28 Published:2022-05-24

摘要/Abstract

摘要： 基于0.18 μm CMOS工艺，采用浅槽隔离（STI）注入法对1.8 V LVNMOS器件进行总剂量加固，并对比分析了⁶⁰Co（315 keV）与X射线（40 keV）辐照源对LVNMOS器件总剂量特性的影响。研究结果表明，在相同偏置条件下，⁶⁰Co与X射线两种辐照源对MOS器件的辐射电离效应具有一定的差异性，前者同时具有康普顿效应和光电效应，后者是光电效应，主要是光子与内层电子作用。由LVNMOS总剂量辐照特性推测，X射线辐照源引起LVNMOS周围环境的SiO₂层中产生的电子与空穴高于⁶⁰Co。

关键词: 总剂量辐射电离, 阈值电压, 60Co, X射线

Abstract: The total ionizing dose of 1.8 V LVNMOS devices is reinforced by shallow trench isolation (STI) injection method based on 0.18 μm CMOS process, and the effects of ⁶⁰Co (315 keV) and X-ray (40 keV) irradiation sources on the total ionizing dose characteristics of LVNMOS devices are compared and analyzed. The results show that the effects of the ionizing radiation caused by ⁶⁰Co and X-ray irradiation sources on MOS devices are different under the same bias condition. The former can form both Compton effect and photoelectric effect, and the latter mainly arises of the photoelectric effect, which is from the interaction between photons and inner electrons. From the total ionizing dose characteristics of LVNMOS, it can be inferred that the electrons and holes produced in the SiO₂ layer of LVNMOS caused by X-ray irradiation source are higher than those by ⁶⁰Co.

Key words: total ionizing dose, threshold voltage, 60Co, X-ray

中图分类号:

TN306
V520.6

陶伟;刘国柱;宋思德;魏轶聃;赵伟. 辐照源对LVMOS器件总剂量辐射电离特性的影响^*[J]. 电子与封装, 2022, 22(7): 070405 .

TAO Wei, LIU Guozhu, SONG Side, WEI Yidan, ZHAO Wei. Influence of IrradiationSource on Total Ionizing Dose Characteristics of LVMOS Devices[J]. Electronics & Packaging, 2022, 22(7): 070405 .

参考文献

[1] 刘文平. 硅半导体器件辐射效应及加固技术[M]. 北京：科学出版社, 2013: 6-112.
[2] 刘佰清, 刘国柱, 吴建伟, 等. 栅氧化方式对NMOS器件总剂量电离效应的影响[J]. 电子与封装, 2017, 17(11): 45-48.
[3] XIAO Z Q, LIU G Z, WEI J H, et al. Effects of TID radiation on P+ ion-implanted HVNMOS devices[J]. Microelectronics Reliability, 2020, 113: 113920.
[4] 范雪, 李威, 李平, 等. 基于环形栅和半环形栅N沟道金属氧化物半导体晶体管的总剂量辐射效应研究[J]. 物理学报, 2012, 61(1): 1-6.
[5] SHANEYFELT R, SCHWANK J R, FLEETWOOD D M , et al. Interface trap buildup rates in wet and dry oxides[J], IEEE Transactions on Nuclear Science, 1992, 39(6): 2244-2251.
[6] SCHWANK J R, FLEETWOOD D M. Effect of post-oxidation anneal temperature on radiation-induced charge trapping in metal-oxide-semiconductor devices[J]. Applied Physics Letters, 1998, 53(9): 770-772.
[7] WANG Y, NISHIOKA Y, MA T P, et al. Radiation and hot-electron effects on SiO2/Si interface with oxides grown in containing small amounts of trichloroethane [J]. Applied Physics Letters, 1998, 52(7): 573-575.
[8] 牟维兵, 陈盘训. 用蒙特卡罗法计算X射线在重金属界面的剂量增强系数[J]. 物理学报, 2001, 50(2): 189-192.
[9] 陈盘训, 周开明. X射线剂量增强效应[J]. 物理, 1997(12): 23-26.
[10] DOZIER C M, BROWN D B, FREITAG R K, et al. Use of the subthreshold behavior to compare X-ray and Co-60 radiation-induced defects in MOS transistors[J]. IEEE Transactions on Nuclear Science, 1986, 33(6): 1324-1329.
[11] SHANEYFELT M R, FLEETWOOD D M, SCHWANK J R, et al. Charge yield for cobalt-60 and 10-keV X-ray irradiations of MOS devices[J]. IEEE Transactions on Nuclear Science. 1991, 38(6): 1187-1194.
[12] DOZIER C M, BROWN D B, THROCKMORTON J L, et al. Defect production in SiO2 by X-ray and Co-60 radiations[J]. IEEE Transactions on Nuclear Science, 1985, 32(6): 4363-4368.
[13] 刘国柱. 抗辐射FLASH型FPGA的核心配置单元设计及工艺集成技术研究[D]. 南京：东南大学，2022：57-65.
[14] SCHWANK J R, SHANEYFELT M R, FLEETWOOD D M, et al. Radiation effects in MOS oxides[J]. IEEE Trans Nucl Sci, 2008, 65(4): 1833-1853.
刘国柱（1980—），男，江苏盐城人，博士，高级工程师，主要研究方向为抗辐射超大规模集成电路。

中国半导体行业协会封装分会会刊

中国电子学会电子制造与封装技术分会会刊

辐照源对LVMOS器件总剂量辐射电离特性的影响^*

Influence of IrradiationSource on Total Ionizing Dose Characteristics of LVMOS Devices

PDF

可视化

摘要/Abstract

引用本文

使用本文

参考文献

相关文章 11

编辑推荐

Metrics

本文评价

[1]	江燕, 贺春燕, 曹正州, 张艳飞, 徐玉婷, 涂波, 刘国柱. 用于Flash型FPGA的电流读出电路^*[J]. 电子与封装, 2023, 23(4): 40301-.
[2]	徐海铭, 汪敏. 30 V SGT N-Channel MOSFET总剂量效应研究[J]. 电子与封装, 2023, 23(11): 110402-.
[3]	伍振;周琦;潘超武;杨宁;张波. 重复短路应力下p-GaN HEMT器件的阈值电压退化机制^*[J]. 电子与封装, 2022, 22(6): 60401-.
[4]	张玲玲;郭凤丽;石磊. 厚栅氧PMOS γ射线剂量探测器芯片工艺优化研究[J]. 电子与封装, 2021, 21(9): 90404-.
[5]	马红跃，方健，雷一博，黎明，卜宁，张波. 一种总剂量辐照加固的双栅LDMOS器件[J]. 电子与封装, 2021, 21(8): 80401-.
[6]	马阔,乔明,周锌,王卓. 高压SOI pLDMOS器件电离辐射总剂量效应研究[J]. 电子与封装, 2020, 20(6): 60403-.
[7]	吴素贞;徐政;徐海铭;宋思德;谢儒彬;洪根深;吴建伟;贺琪. MIS型GaN HEMT器件的X-ray辐射总剂量效应研究[J]. 电子与封装, 2020, 20(12): 120403-.
[8]	朱少立，汤偲愉，刘国柱，曹立超，洪根深，吴建伟，郑若成. 90nm浮栅型P-FLASH器件总剂量电离辐射效应研究[J]. 电子与封装, 2018, 18(8): 36-40.
[9]	刘佰清，刘国柱，吴健伟，洪根深，郑若成. 栅氧化方式对NMOS器件总剂量电离效应的影响[J]. 电子与封装, 2017, 17(11): 44-48.
[10]	涂启志¹，凌浪波². 高压IGBT芯片高温测试温度的阈值电压标定[J]. 电子与封装, 2017, 17(10): 13-16.
[11]	何志刚，梁　堃，周庆波，龚国虎，王晓敏. 基于X射线成像的PBGA器件焊接质量检测[J]. 电子与封装, 2016, 16(2): 1-4.