关键词: 静电放电保护, 薄外延片, 电源钳位

Abstract: Thin epitaxial wafer can effectively improve the single event latch-up resistance of radiation-hard chip, but the measured results show that the electrostatic discharge (ESD) performance of the gate grounded MOS (GGMOS) structure is obviously attenuated under the thin epitaxial wafer. The attenuation mechanism is analyzed, and the power clamp ESD structure is designed. The complete ESD performance is simulated, and the whole chip ESD protection network is analyzed and optimized. The measured results show that the ESD performance meets the 4 kV design requirement.

Key words: electrostatic discharge protection, thin epitaxial wafer, power clamp