GaN垂直结构器件结终端设计*

doi:10.16257/j.cnki.1681-1070.2023.0034

摘要/Abstract

摘要： 得益于优异的材料性能，基于宽禁带半导体氮化镓（GaN）的功率电子器件得到广泛关注。与横向的高电子迁移率晶体管（HEMT）结构相比，垂直结构的GaN功率器件更易于实现高耐压和大电流，且其不被表面陷阱态影响，性能较为稳定，有望进一步拓展在中高压领域的应用。在垂直器件中，一个重要的设计是利用结终端来扩展器件内部电场的分布，减轻或消除结边缘的电场集聚效应，防止功率器件的过早击穿。结合GaN垂直结构肖特基二极管（SBD）以及PN结二极管（PND），回顾了常用的结终端设计方法和工艺技术，对各自的优缺点进行了总结。此外，GaN的材料性能与传统硅（Si）以及碳化硅（SiC）材料存在较大差异，讨论了其对结终端设计和制备的影响。

关键词: 宽禁带半导体, 氮化镓, 垂直结构器件, 二极管, 结终端

Abstract: Thanks to the excellent material properties, power electronic devices based on wide bandgap semiconductor gallium nitride (GaN) have been paid much attention. Compared with lateral high electron mobility transistor (HEMT) structures, vertical structured GaN power devices are easier to realize high blocking voltage and high operation current. Meanwhile, it is much stable and immune to surface trap states. Therefore, GaN power devices are supposed to be promising candidates for medium and high voltage applications. In a vertical device, junction terminal is an important design to spread the electric field distribution in the device, alleviate or eliminate the field-crowding effect near the junction edge, and protect the device from premature breakdown. The design and fabrication technology of frequently used junction terminals in GaN vertical Schottky barrier diodes (SBDs) and PN diodes (PNDs) are reviewed, and the benefits and shortcomings are discussed, respectively. In addition, the material properties of GaN are quite different with traditional silicon (Si) and silicon carbide (SiC) counterparts, and influences on the design and fabrication of junction terminals are also discussed.

Key words: wide bandgapsemiconductor, GaN, vertical structure device, diodes, junction terminal

中图分类号:

TN312+.4

徐嘉悦;王茂俊;魏进;解冰;郝一龙;沈波. GaN垂直结构器件结终端设计^*[J]. 电子与封装, 2023, 23(1): 010105 .

XU Jiayue, WANG Maojun, WEI Jin, XIE Bing, HAO Yilong, SHEN Bo. Junction Terminal Design for GaN Vertical Structure Devices[J]. Electronics & Packaging, 2023, 23(1): 010105 .

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中国半导体行业协会封装分会会刊

中国电子学会电子制造与封装技术分会会刊

GaN垂直结构器件结终端设计^*

Junction Terminal Design for GaN Vertical Structure Devices

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