硅基雪崩光电二极管技术及应用*

doi:10.16257/j.cnki.1681-1070.2021.0301

电子与封装 ›› 2021, Vol. 21 ›› Issue (3): 030101 . doi: 10.16257/j.cnki.1681-1070.2021.0301

• 封面文章 • 下一篇

硅基雪崩光电二极管技术及应用^*

陈全胜^1,2;张明^1,2;彭时秋^1,2;陈培仓^1,2;王涛^1,2;贺琪^1,2

1. 无锡中微晶园电子有限公司，江苏无锡　214072；2. 中科芯集成电路有限公司，江苏无锡　214072

收稿日期:2020-10-31 出版日期:2021-03-23 发布日期:2021-01-15
作者简介:陈全胜（1991—），男，江苏滨海人，博士，工程师，主要从事硅基光电器件的研究。

Technology and Application of Silicon Avalanche Photodiode

CHEN Quansheng^1,2, ZHANG Ming^1,2,PENG Shiqiu^1,2, CHEN Peicang^1,2, WANG Tao^1,2, HE Qi^1,2

1. WuxiZhongwei Microchips Co., Ltd., Wuxi 214072, China;2. China Key System & Integrated Circuit Co., Ltd., Wuxi 214072, China

Received:2020-10-31 Online:2021-03-23 Published:2021-01-15

摘要/Abstract

摘要： 硅基雪崩光电二极管是一种可用于对微弱光甚至单光子进行探测的光电器件，被广泛应用于激光测距、激光成像、量子通信和生物医疗等领域。从工作原理、常见结构和分类3个方面对硅基雪崩光电二极管的技术进行分析，并对其性能发展趋势进行阐述，最后介绍了硅基雪崩光电二极管的应用。

关键词: 光电器件, 雪崩光电二极管, 弱光探测, 激光雷达

Abstract: The silicon avalanche photodiode is a photoelectric device that can be used to detect weak light or even single photons. It is widely used in laser ranging, laser imaging, quantum communication and biomedical fields. This article analyzes the technology of silicon avalanche photodiodes from three aspects: working principle, common structure and classification. The development trend is described, and finally the application of silicon avalanche photodiodes is introduced.

Key words: photoelectricdevice, avalanchephotodiode, weaklightdetector, lidar

中图分类号:

TN364

陈全胜, 张明, 彭时秋, 陈培仓, 王涛, 贺琪. 硅基雪崩光电二极管技术及应用^*[J]. 电子与封装, 2021, 21(3): 030101 .

CHEN Quansheng, ZHANG Ming, PENG Shiqiu, CHEN Peicang, WANG Tao, HE Qi. Technology and Application of Silicon Avalanche Photodiode[J]. Electronics & Packaging, 2021, 21(3): 030101 .

参考文献

[1] EISAMAN M D, FAN J, MIGDALL A, et al. Invited review article: Single-photon sources and detectors[J]. Review of Scientific Instruments, 2011,82(7):071101.
[2] 黄敏敏，朱兴龙.硅光电探测器的发展与应用[J].机械工程与自动化，2011(6):203-205.
[3] 顾怀奇.Si基微元APD雪崩增益与结构参数优化的研究[D].黑龙江:哈尔滨工业大学，2012.
[4] 魏语航.集成电路技术的发展趋势研究[J].科技与创新，2018(1):99-100.
[5] 李新，魏广芬，吕品.半导体传感器原理与应用[M]. 北京：清华大学出版社，2018.
[6] MCKAY K G. Avalanche breakdown in silicon[J]. Physical Review, 1954, 94(4): 877.
[7] HAITZ R H, GOETZBERGER A. Avalanche noise study in microplasmas and uniform junctions[J]. Solid State Electronics, 1963, 6(6): 678-680.
[8] GOETZBERGER A, MCDONALD B H, HAITZ R H, et al. Avalanche effects in silicon p–n junctions. II. Structurally perfect junctions[J]. Journal of Applied Physics, 1963, 34(6): 1591-1600.
[9] LACAITA A, GHIONI M, COVA S. Double epitaxy improves single-photon avalanche diode performance[J]. Electronics Letters, 1989, 25(13): 841-843.
[10] SPINELLI A, GHIONI M A, COVA S D, et al. Avalanche detector with ultraclean response for time-resolved photon counting[J]. IEEE Journal of Quantum Electronics, 1998, 34(5):817-821.
[11] Itzler M A , Entwistle M , Owens M , et al. Comparison of 32 x 128 and 32 x 32 Geiger-mode APD FPAs for single photon 3D LADAR imaging[J]. Proceedings of SPIE - The International Society for Optical Engineering, 2011, 8033:80330G.
[12] ALVIN G. S, DANIEL C. C. High-sensitivity, wide-dynamic-range avalanche photodiode pixel design for large-scale imaging arrays[J]. Journal of Electronic Imaging, 2010,19(2): 021102.
[13] KENJI T, MAKOTO A, MASAHIDE S. Experimental determination of the gain distribution of an avalanche photodiode at low gains[J]. IEEE Electron Device Letters. 2009, 30:24-26.
[14] 王巍，冯其，武逶，等.硅基APD器件的工艺及性能仿真分析[J].红外与激光工程，2014(1):140-144.
[15] 李睿智，袁安波，曾武贤.拉通型硅基APD保护环工艺研究[J].半导体光电，2017，38(3):361-364.
[16] BETTA G F D, PANCHERI L, STOPPA D, et al. Avalanche photodiodes in submicron CMOS technologies for high-sensitivity imaging[M/OL]// BETTA G F D. Advances in Photodiodes. Rijeka: InTech, 2011 [2021-01-14]. https://www.researchgate.net/publication/221911281_Avalanche_Photodiodes_in_Submicron_CMOS_Technologies_for_High-Sensitivity_Imaging.
[17] FINKELSTEIN H, ESENER S C. Shallow-trench-isolation (STI)-bounded single-photon CMOS photodetector: US8188563[P]. 2007-07-21.
[18] TOSI A, CALANDRI N, SANZARO M, et al. Low-noise, low-jitter, high detection efficiency InGaAs/InP single-photon avalanche diode[J]. IEEE Journal of Selected Topics in Quantum Electronics, 2014, 20(6): 192-197.
[19] 鞠国豪，程正喜，陈永平,等.基于标准CMOS工艺线性APD倍增区的优化仿真[J].红外与毫米波学报，2018,37(2):184-191,199.
[20] 杨红姣，金湘亮. p-well/DNW单光子雪崩二极管保护环的最小化设计[J].红外与毫米波学报，2018,37(5):527-532.
[21] 中国电子科技集团有限公司四十四所重庆声光电公司.激光雷达用硅APD探测器[J].军民两用技术与产品，2019,(1):49.
[22] 汶宇龙，苟忠莹.盖革模式APD激光测距误差理论研究[J].测绘技术装备，2019,21(3):15-19.
[23] 陈辉.基于APD阵列的三维成像激光雷达方案[J].科技创新与应用，2012(21):34.
[24] 谢肇恒，周坤，李素莹,等.用于核医学成像的硅光电倍增管光电探测器的研究进展[J].中国医疗设备，2016,31(9):73-79.
[25] 谭晓明，蒲忠胜，魏志勇,等.SiPM核辐射探测器电路设计[J].核电子学与探测技术，2016,36(4):371-375.
[26] 李千,吴志勇,高世杰, 等.APD阵列探测器在自由空间光通信上的应用研究[J].激光与红外,2018,48(1):10-17.
[27] HADFIELD R H. Single-photon detectors for optical quantum information applications[J]. Nature Photonics, 2009, 3(12): 696-705.
[28] SHIN D, PARK B, CHAE Y, et al. The effect of a deep virtual guard ring on the device characteristics of silicon single photon avalanche diodes[J]. IEEE Transactions on Electron Devices, 2019, 66(7): 2986-2991.
[29] 金豪喆. 基于APD雪崩光电二极管的生物发光检测的研究与应用[D]. 上海: 华东师范大学，2009.

中国半导体行业协会封装分会会刊

中国电子学会电子制造与封装技术分会会刊

硅基雪崩光电二极管技术及应用^*

Technology and Application of Silicon Avalanche Photodiode

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