GaN HEMT热阻测试技术研究

doi:10.16257/j.cnki.1681-1070.2023.0163

电子与封装 ›› 2023, Vol. 23 ›› Issue (11): 110104 . doi: 10.16257/j.cnki.1681-1070.2023.0163

所属专题： ICTC 2023(集成电路测试大会)

• ICTC 2023(集成电路测试大会)专题 • 上一篇下一篇

GaN HEMT热阻测试技术研究

邱金朋,沈竞宇

华润微电子重庆有限公司，重庆 404100

收稿日期:2023-09-06 出版日期:2023-11-28 发布日期:2023-11-28
作者简介:邱金朋（1994—），男，山东德州人，本科，工程师，主要研究方向为GaN HEMT功率器件测试、可靠性。

Research on Thermal ResistanceTesting Technology of GaN HEMT

QIU Jinpeng, SHEN Jingyu

China Resources Microelectronics Chongqing Co., Ltd.,Chongqing 404100, China

Received:2023-09-06 Online:2023-11-28 Published:2023-11-28

摘要/Abstract

摘要： GaN作为第三代半导体材料的代表，具有优越的电学性能，被应用在诸多领域。随着功率密度提升、工作频率增加，GaN器件会产生明显的热效应，温度对GaN的性能及可靠性有直接影响，因此热阻测试及结温表征是非常重要的。根据GaN器件的结构、工作原理以及特性参数，结合JEDEC热阻测试的标准，对不同电压等级、不同封装结构的GaN器件进行测试，验证了使用导通电阻作为温度敏感参数的热阻测试方法的正确性。

关键词: GaN, 导通电阻, 结温, 热阻

Abstract: As the representative of the third generation semiconductormaterials, GaN has excellent electrical properties and isused in many fields.With the increase of power density and working frequency, GaN devices will produce obvious thermal effects, and the temperature has a direct impact on the performance and reliability of GaN, so it is very important to test the thermal resistance and characterize the junction temperature.According to the structure, working principle and characteristic parameters of GaN devices, combined with standards of JEDEC thermal resistance test, the correctness of the thermal resistance test method using on-resistance as the temperature sensitive parameter is verified by testing GaN devices with different voltage levels and different package structures.

Key words: GaN, on-resistance, junctiontemperature, thermalresistance

中图分类号:

TN307

邱金朋, 沈竞宇. GaN HEMT热阻测试技术研究[J]. 电子与封装, 2023, 23(11): 110104 .

QIU Jinpeng, SHEN Jingyu. Research on Thermal ResistanceTesting Technology of GaN HEMT[J]. Electronics & Packaging, 2023, 23(11): 110104 .

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中国半导体行业协会封装分会会刊

中国电子学会电子制造与封装技术分会会刊

GaN HEMT热阻测试技术研究

Research on Thermal ResistanceTesting Technology of GaN HEMT

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