单BJT支路运放失调型带隙基准电路

doi:10.16257/j.cnki.1681-1070.2024.0166

电子与封装 ›› 2024, Vol. 24 ›› Issue (12): 120304 . doi: 10.16257/j.cnki.1681-1070.2024.0166

单BJT支路运放失调型带隙基准电路

王星,相立峰,张国贤,孙俊文,崔明辉

中国电子科技集团第五十八研究所，江苏无锡? 214035

收稿日期:2024-03-29 出版日期:2024-12-25 发布日期:2024-12-25
作者简介:王星（1992—），男，山西运城人，硕士，高级工程师，主要研究方向为超大规模集成电路和模数混合信号电路设计。

Single BJT Branch Operational Amplifier Offset Bandgap Reference Circuit

WANG Xing, XIANG Lifeng, ZHANG Guoxian, SUN Junwen, CUI Minghui

China Electronics Technology Group Corporation No.58?Research Institute,Wuxi?214035,?China

Received:2024-03-29 Online:2024-12-25 Published:2024-12-25

摘要/Abstract

摘要： 提出一种单双极结型晶体管（BJT）支路运放失调型带隙基准电路，与传统带隙基准相比，所提出的带隙基准具有更少的BJT和无源元件，功耗更低。该带隙基准结构的BJT的发射极-基极电压V_BE与绝对温度成反比（CTAT），基于运算放大器工作在亚阈值区的非平衡输入对管的栅极-漏极电压的差值ΔV_GS与绝对温度成正比（PTAT），通过单BJT支路线性叠加，得到带隙基准电压。所提出电路通过两级运放和具有源跟随功能的单BJT支路构成闭环负反馈系统，运放电路采用米勒电容进行频率补偿，提高系统稳定性。此外，通过在输出节点增加输出电容，改善高频情况下的电源抑制比（PSRR）。所提出的带隙基准电路基于标准SMIC 55 nm CMOS混合信号工艺制造，在-55~125 ℃范围内实现了15.7×10^-⁶/℃的温度系数，基准输出电压为1.27 V，PSRR在1 Hz、1 kHz、10 MHz时分别为-39.65 dB、-39.65 dB、-33.81 dB，功耗为0.730 μW，电路稳定时间为20 μs，无需启动电路，具有良好的性能指标。

关键词: 带隙基准, 温度系数, 单BJT支路, 亚阈值区

Abstract: A single bipolar junction transistor (BJT) branch operational amplifier offset bandgap reference circuit is proposed. Compared with traditional bandgap references, the proposed bandgap reference has fewer BJTs and passive components, and lower power consumption. The emitter base voltage V_BE of the BJT with this bandgap reference structure is inversely proportional to absolute temperature (CTAT). Based on the unbalanced input of the operational amplifier operating in the subthreshold region, the difference in gate drain voltage Δ V_GSof the transistor is proportional to absolute temperature (PTAT). The bandgap reference voltage is obtained by linearly superimposing a single BJT branch. The proposed circuit consists of a closed-loop negative feedback system consisting of two-stage operational amplifiers and a single BJT branch with source following function. The operational amplifier circuit uses Miller capacitors for frequency compensation to improve system stability. In addition, by increasing the output capacitance at the output node, the power supply rejection ratio (PSRR) under high frequency conditions can be improved. The proposed bandgap reference circuit is manufactured based on the standard SMIC 55 nm CMOS mixed signal process, achieving a temperature coefficient of 15.7 × 10^-⁶/℃ in the range of -55~125 ℃. The reference output voltage is 1.27 V, and the PSRR is -39.65 dB, -39.65 dB and -33.81 dB at 1 Hz, 1 kHz, and 10 MHz, respectively. The power consumption of 0.730 μW, circuit stabilization time of 20 μs, no need to start the circuit, with good performance indicators.

Key words: bandgap reference, temperature coefficient, single BJT branch, subthreshold region

中图分类号:

TN431.1

王星,相立峰,张国贤,孙俊文,崔明辉. 单BJT支路运放失调型带隙基准电路[J]. 电子与封装, 2024, 24(12): 120304 .

WANG Xing, XIANG Lifeng, ZHANG Guoxian, SUN Junwen, CUI Minghui. Single BJT Branch Operational Amplifier Offset Bandgap Reference Circuit[J]. Electronics & Packaging, 2024, 24(12): 120304 .

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单BJT支路运放失调型带隙基准电路

Single BJT Branch Operational Amplifier Offset Bandgap Reference Circuit

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