关键词: ?电压基准源, 亚阈值区, 低功耗, 高电源抑制比, 无运放结构

Abstract: Using the MOS tube working in the sub-threshold region, a reference voltage with good temperature coefficient is generated, and at the same time, the cascode structure is used in the output branch, so that the power supply rejection ratio of the voltage reference source is effectively improved. Based on the 0.18 μm COMS process, using the Spectre environment in Cadence for simulation, under the standard TT process, the voltage reference source is within the temperature range of -40-125 ℃, the reference voltage changes only 1.627 mV, and the temperature coefficient is 9.56×10^-6/℃, the power supply rejection ratio is -72.11 dB, when using a 5 V power supply voltage, the voltage reference source consumes only 164.8 nA of current as a whole, and the power consumption is only 0.824 μW. The reference circuit is not only simple in structure, but also has the advantages of low power consumption, high power supply rejection ratio, and no operational amplifier structure.

Key words: voltagereferencesource, sub-thresholdarea, lowpowerconsumption, highpowersupplyrejectionratio, nooperationalamplifierstructure