内嵌NPN结构的高维持电压可控硅器件*

doi:10.16257/j.cnki.1681-1070.2024.0081

电子与封装 ›› 2024, Vol. 24 ›› Issue (7): 070401 . doi: 10.16257/j.cnki.1681-1070.2024.0081

内嵌NPN结构的高维持电压可控硅器件^*

陈泓全^1,2,齐钊^1,2,王卓¹,赵菲¹,乔明^1,3

1. 电子科技大学集成电路科学与工程学院示范性微电子学院，成都 ?611731；2. 电子科技大学重庆微电子产业技术研究院，重庆 ?400065；3. 电子科技大学广东电子信息工程研究院，广东东莞 ?523107

收稿日期:2023-12-29 出版日期:2024-09-10 发布日期:2024-09-10
作者简介:陈泓全（2000—），男，四川广安人，硕士研究生，主要研究方向为ESD保护、大功率防雷击TVS。

High Holding Voltage Silicon-Controlled Rectifier Device with Embedded NPN Structure

CHEN Hongquan^1,2, QI Zhao^1,2, WANG Zhuo¹, ZHAO Fei¹, QIAO Ming^1,3

1. School of Integrated Circuit Science and Engineering Exemplary Schoolof Microelectronics, University of Electronic Science and Technology ofChina, Chengdu 611731, China; 2. ChongqingInstitute of Microelectronics Industry Technology, University ofElectronic Science and Technology of China, Chongqing 400065,China; 3. Institute of Electronic andInformation Engineering in Dongguan, University of Electronic Science andTechnology of China, Dongguan 523107, China

Received:2023-12-29 Online:2024-09-10 Published:2024-09-10

摘要/Abstract

摘要： 针对传统可控硅（SCR）器件触发电压高、维持电压低、闩锁风险大等问题，提出了一种内嵌NPN结构的高维持电压SCR器件。维持电压由传统器件的1.2 V显著增大到10.3 V。与传统结构相比，该新型SCR结构体内存在2条电流路径，通过嵌入的NPN电流路径延缓了器件中寄生PNP管的开启过程，抑制了SCR结构里NPN与PNP的正反馈过程，使得SCR电流路径在电流较大时才能完全开启，从而达到提高维持电压的目的。基于半导体器件仿真软件，模拟了器件在直流下的电学特性，分析其工作机理并讨论了关键器件参数对其电学特性的影响。

关键词: 内嵌NPN结构, 静电放电, 维持电压, SCR

Abstract: To address the problems of high trigger voltage, low holding voltage and high latch-up risk in traditional silicon-controlled rectifier (SCR) devices, a high holding voltage SCR device with an embedded NPN structure is proposed. The holding voltage is significantly increased from 1.2 V in traditional device to 10.3 V. Compared with the traditional structure, the new SCR structure has two current paths. The embedded NPN current path delays the turn-on process of the parasitic PNP transistors in the device, suppressing the positive feedback process between the NPN and PNP in the SCR structure, so that the SCR current path can only be fully turned on when the current is large, thereby achieving the purpose of improving the holding voltage. The electrical characteristics of the device under direct current are simulated based on semiconductor device simulation software. The working mechanism of the device is analyzed and the influence of key device parameters on its electrical characteristics is discussed.

Key words: embedded NPN structure, electrostatic discharge, holding voltage, SCR

中图分类号:

TN402

陈泓全,齐钊,王卓,赵菲,乔明. 内嵌NPN结构的高维持电压可控硅器件^*[J]. 电子与封装, 2024, 24(7): 070401 .

CHEN Hongquan, QI Zhao, WANG Zhuo, ZHAO Fei, QIAO Ming. High Holding Voltage Silicon-Controlled Rectifier Device with Embedded NPN Structure[J]. Electronics & Packaging, 2024, 24(7): 070401 .

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中国半导体行业协会封装分会会刊

中国电子学会电子制造与封装技术分会会刊

内嵌NPN结构的高维持电压可控硅器件^*

High Holding Voltage Silicon-Controlled Rectifier Device with Embedded NPN Structure

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