一种集成栅电阻的高可靠性SiC功率器件研究

doi:10.16257/j.cnki.1681-1070.2025.0147

电子与封装 ›› 2025, Vol. 25 ›› Issue (11): 110403 . doi: 10.16257/j.cnki.1681-1070.2025.0147

一种集成栅电阻的高可靠性SiC功率器件研究

臧雪¹，徐思晗¹，孙相超¹，刘志强¹，邓小川²

中国第一汽车股份有限公司研发总院

收稿日期:2025-04-02 出版日期:2025-11-28 发布日期:2025-05-26
作者简介:臧雪（1999—），女，吉林延边朝鲜族自治州人，硕士，主要研究方向为宽禁带半导体功率器件。

Research on High-Reliability Silicon Carbide Power Devices with Integrated Gate Resistors

ZANG Xue¹, XU Sihan¹, SUN Xiangchao¹,LIU Zhiqiang¹, DENG Xiaochuan²

1. GlobalR&D Center, China FAW Corporation Limited, Changchun 130013, China; 2. School of Integrated Circuit Science and Engineering, Universityof Electronic Science and Technology of China, Chengdu 610054, China

Received:2025-04-02 Online:2025-11-28 Published:2025-05-26

摘要/Abstract

摘要： 针对汽车主驱牵引逆变器的高功率密度应用需求，设计并制造了一种集成栅电阻的平面型1 200 V SiC MOSFET。该器件导通电阻为14 mΩ，击穿电压达到1 750 V，通过优化多晶硅电阻结构，实现芯片上集成5 Ω栅电阻；在母线电压为800 V时，SiC MOSFET短路时间为2.7 μs，短路耐量达到1.8 J。此外，器件通过了168 h高温栅偏、高温反偏等可靠性评估测试，表明该集成栅电阻的SiC MOSFET具备在极端环境下的工作能力。

关键词: SiCMOSFET, 集成栅电阻, 牵引逆变器

Abstract: To meet the high-power-density requirements of automotive main drive traction inverters, a planar 1 200 V SiC MOSFET with an integrated gate resistor has been designed and manufactured. The device achieves an on-resistance of 14 mΩ and a breakdown voltage exceeding 1 750 V. By optimizing the polysilicon resistor structure, a 5 Ω gate resistor is monolithically integrated on the chip. Under an 800 V bus voltage, the SiC MOSFET exhibits a short-circuit withstand capability of 2.7 μs with an energy tolerance of 1.8 J. Furthermore, the device successfully passes stringent reliability tests, including 168-hour high-temperature gate bias and high-temperature reverse bias tests, demonstrating robust performance of the proposed integrated-gate-resistor SiC MOSFET in extreme operating conditions.

Key words: SiC MOSFET, integrated gate resistor, traction inverter

中图分类号:

TN323⁺.4

臧雪，徐思晗，孙相超，刘志强，邓小川. 一种集成栅电阻的高可靠性SiC功率器件研究[J]. 电子与封装, 2025, 25(11): 110403 .

ZANG Xue, XU Sihan, SUN Xiangchao,LIU Zhiqiang, DENG Xiaochuan. Research on High-Reliability Silicon Carbide Power Devices with Integrated Gate Resistors[J]. Electronics & Packaging, 2025, 25(11): 110403 .

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中国半导体行业协会封装分会会刊

中国电子学会电子制造与封装技术分会会刊

一种集成栅电阻的高可靠性SiC功率器件研究

Research on High-Reliability Silicon Carbide Power Devices with Integrated Gate Resistors

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