碳化硅MOSFET的单粒子漏电退化研究

doi:10.16257/j.cnki.1681-1070.2025.0127

电子与封装 ›› 2025, Vol. 25 ›› Issue (11): 110402 . doi: 10.16257/j.cnki.1681-1070.2025.0127

碳化硅MOSFET的单粒子漏电退化研究

徐倩^1,2，马瑶^1,2，黄文德^1,2，杨诺雅^1,2，王键^1,2，龚敏^1,2，李芸^1,2，黄铭敏^1,2，杨治美^1,2

1. 四川大学物理学院微电子技术四川省重点实验室，成都 610064；2. 四川大学物理学院辐射物理及技术教育部重点实验室，成都 610064

收稿日期:2025-02-21 出版日期:2025-11-28 发布日期:2025-04-30
作者简介:徐倩（1999—），女，四川达州人，硕士研究生，从事SiC功率器件辐照效应研究工作。

Investigation on Single-Event Leakage Degradation of SiC MOSFETs

XU Qian^{1, 2}, MA Yao^{1, 2}, HUANG Wende^{1, 2}, YANG Nuoya^{1, 2}, WANG Jian^{1, 2}, GONG Min^{1, 2}, LI Yun^{1, 2}，HUANG Mingmin^{1, 2}, YANG Zhimei^{1, 2}

1. Key Laboratory of Microelectronics, College of Physics, Sichuan University, Chengdu 610064,China; 2. Key Laboratory of Radiation Physics andTechnology, College of Physics, Sichuan University, Chengdu 610064,China

Received:2025-02-21 Online:2025-11-28 Published:2025-04-30

摘要/Abstract

摘要： 通过重离子辐照实验，系统研究SiC金属-氧化物-半导体场效应晶体管（MOSFET）的单粒子漏电退化规律，并探讨潜在损伤对栅极可靠性的影响。采用光诱导电阻变化（OBIRCH）、聚焦离子束（FIB）和透射电子显微镜（TEM）等检测技术，对受单粒子潜在损伤影响的器件内部结构变化进行表征。结合宏观电学特性与微观结构变化，阐明SiC MOSFET单粒子漏电退化的机制。研究结果为提升SiC MOSFET在复杂辐照环境下的可靠性提供理论依据。

关键词: SiC, MOSFET, 单粒子效应, 漏电退化, 潜在损伤

Abstract: The degradation behavior of single-event leakage in SiC metal-oxide-semiconductor field-effect transistors (MOSFETs) is systematically investigated through heavy-ion irradiation experiments, and the impact of latent damage on gate reliability is explored. The internal structural changes of devices affected by single-event latent damage are characterized using optical beam-induced resistance change (OBIRCH), focused ion beam (FIB), and transmission electron microscopy (TEM) techniques. By correlating the macroscopic electrical characteristics with microscopic structural variations, the mechanism of single-event leakage degradation in SiC MOSFETs is elucidated. The results provide a theoretical basis for improving the reliability of SiC MOSFETs under complex irradiation environments.

Key words: SiC, MOSFET, single-event effect, leakage degradation, latent damage

中图分类号:

TN386.1

徐倩，马瑶，黄文德，杨诺雅，王键，龚敏，李芸，黄铭敏，杨治美. 碳化硅MOSFET的单粒子漏电退化研究[J]. 电子与封装, 2025, 25(11): 110402 .

XU Qian, MA Yao, HUANG Wende, YANG Nuoya, WANG Jian, GONG Min, LI Yun，HUANG Mingmin, YANG Zhimei. Investigation on Single-Event Leakage Degradation of SiC MOSFETs[J]. Electronics & Packaging, 2025, 25(11): 110402 .

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中国半导体行业协会封装分会会刊

中国电子学会电子制造与封装技术分会会刊

碳化硅MOSFET的单粒子漏电退化研究

Investigation on Single-Event Leakage Degradation of SiC MOSFETs

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