高功率电子封装中大面积烧结技术研究进展*

doi:10.16257/j.cnki.1681-1070.2025.0082

摘要/Abstract

摘要： 在第三代半导体材料（如碳化硅和氮化镓）的推动下，大面积烧结技术因其在高功率电子封装中的独特优势，展现出广阔的应用前景。综述了银和铜作为大面积烧结材料在功率模块封装中的研究进展，系统分析了大面积烧结的定义标准、材料特性、工艺控制方法及其对接头性能的影响。探讨了大面积烧结过程中温度、压力、表面处理工艺等的优化策略，以提升接头的致密性、热导率及机械性能。此外，针对当前大面积烧结技术所面临的挑战提出了未来的优化方向。通过总结国内外相关研究成果，为大面积烧结技术在高功率电子封装领域的进一步发展提供了理论支持与实践参考。

关键词: 功率电子封装, 大面积烧结, 银烧结, 铜烧结, 烧结工艺, 接头性能测试

Abstract: Driven by third-generation semiconductor materials (such as silicon carbide and gallium nitride), large-area sintering technology has demonstrated promising prospects due to its unique advantages in high-power electronic packaging. The research progress of silver and copper as large-area sintering materials in power module packaging is reviewed. The definition standards of large-area sintering, material properties, process control methods, and their effects on joint performance are systematically analyzed. Optimization strategies of temperature, pressure, and surface treatment process during large-area sintering are discussed to enhance the density, thermal conductivity, and mechanical properties of the joints. Furthermore, future optimization directions are proposed to address the current challenges of large-area sintering technology. By summarizing the relevant research achievements at home and abroad, it offers theoretical guidance and practical references for the further development of large-area sintering technology in high-power electronic packaging.

Key words: power electronic packaging, large-area sintering, silver sintering, copper sintering, sintering process, joint performance testing

中图分类号:

TN305.94

边乐陶,刘文婷,刘盼. 高功率电子封装中大面积烧结技术研究进展^*[J]. 电子与封装, 2025, 25(3): 030108 .

BIAN Letao, LIU Wenting, LIU Pan. Research Progress on Large-Area Sintering Technology for High-Power Electronic Packaging[J]. Electronics & Packaging, 2025, 25(3): 030108 .

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中国半导体行业协会封装分会会刊

中国电子学会电子制造与封装技术分会会刊

高功率电子封装中大面积烧结技术研究进展^*

Research Progress on Large-Area Sintering Technology for High-Power Electronic Packaging

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