关键词: 抗辐射, 总剂量, 单粒子闩锁, 单粒子翻转, 全局三模冗余

Abstract: In order to reduce the influence of radiation hardened design on the basic performance of components, based on 0.18 μm CMOS radiation-hard process, total ionizing dose (TID) harden is realized by field injection, and single event latch-up (SEL) harden is realized by optimizing the layout design rule, and single event upset (SEU) harden is realized by flexible design technology for different specification. Through developing circuits by above methods, it is verified that the radiation harden circuit designed by radiation-hard process has obvious advantages in radiation harden performance and circuit area.

Key words: radiation hardened, total ionizing dose, single event latch-up, single event upset, global triple module redundant