一种高温度稳定性的GaN基准电压源设计*

doi:10.16257/j.cnki.1681-1070.2023.0051

电子与封装 ›› 2023, Vol. 23 ›› Issue (5): 050304 . doi: 10.16257/j.cnki.1681-1070.2023.0051

一种高温度稳定性的GaN基准电压源设计^*

张黎莉;邱一武;殷亚楠;王韬;周昕杰

中国电子科技集团公司第五十八研究所，江苏无锡 214035

收稿日期:2022-11-06 出版日期:2023-05-23 发布日期:2023-05-23
作者简介:张黎莉（1993—），女，江苏无锡人，博士，工程师，主要研究方向为集成电路设计与器件辐射效应分析。

Design of a GaN Reference Voltage Source with HighTemperature Stability

ZHANG Lili, QIU Yiwu, YIN Ya’nan, WANG Tao, ZHOU Xinjie

China Electronics Technology GroupCorporation No.58 Research Institute,Wuxi 214035, China

Received:2022-11-06 Online:2023-05-23 Published:2023-05-23

摘要/Abstract

摘要： 基于宽带隙、高饱和电子漂移速率、高击穿场强等材料特性优势，GaN高电子迁移率晶体管（HEMT）在高频大功率器件领域发展前景广阔。在集成电路中，基准电压源是为其他电路模块提供稳定参考电压的关键功能模块。基于0.5 μm BCD GaN HEMT工艺，提出一种GaN基准电压源的设计方案。Cadence Spectre仿真结果显示，该GaN基准电压源在－40~150℃范围内可实现2.04 V的稳定电压输出，温度系数为3.7′10^-6/℃。在室温27℃下，当电源电压由5 V增至20 V时，输出电压的线性灵敏度为0.13%/V。该GaN基准电压源具有高温度稳定性，后续可与不同的GaN基电路模块组合构成功能丰富的GaN基集成电路。

关键词: GaNHEMT, 基准电压源, 温度稳定性

Abstract: Due to the advantages of wide bandgap, high saturated electron drift velocity, high breakdown field intensity and other material characteristics, GaN high electron mobility transistor (HEMT) in the field of high-frequency high-power devices has a broad development prospect. In integrated circuits, reference voltagesource is a key module which generates a stable reference voltage for other circuit modules. A GaN reference voltage source based on 0.5 μm BCD GaN HEMT process is proposed. Cadence Spectre simulation results show that the GaN reference voltage source could generate a stable reference voltage of 2.04 V with a temperature coefficient of 3.7′10^-6/℃ in the temperature range of －40-150 ℃. As the supply voltage increases from 5 V to 20 V at a room temperature of 27 ℃, the line sensitivity of the reference voltage is 0.13%/V. The GaN reference voltage source has high temperature stability, and can be combined with different GaN-based circuit modules to constitute functional GaN-based integrated circuits.

Key words: GaN HEMT, reference voltage source, temperature stability

中图分类号:

TN710.2

张黎莉;邱一武;殷亚楠;王韬;周昕杰. 一种高温度稳定性的GaN基准电压源设计^*[J]. 电子与封装, 2023, 23(5): 050304 .

ZHANG Lili, QIU Yiwu, YIN Ya’nan, WANG Tao, ZHOU Xinjie. Design of a GaN Reference Voltage Source with HighTemperature Stability[J]. Electronics & Packaging, 2023, 23(5): 050304 .

参考文献

[1] YANG F, XU C, AKIN B. Experimental evaluation and analysis of switching transient's effect on dynamic on-resistance in GaN HEMTs[J]. IEEE Transactions on Power Electronics, 2019, 34(10): 10121-10135.
[2] MIZUTANI T, ITO M, KISHIMOTO S, et al. AlGaN/GaN HEMTs with thin InGaN cap layer for normally off operation[J]. IEEE Electron Device Letters, 2007, 28(7): 549-551.
[3] 高媛, 单月晖, 罗卫军. GaN数字功率放大器技术进展[J]. 微电子学, 2021, 51(6): 778-785.
[4] 穆昌根, 党睿, 袁鹏, 等. 增强型GaN HEMT器件的实现方法与研究进展[J]. 电子与封装, 2022, 22(10): 100401.
[5] FU J Z, FOUQUET F, KADI M, et al. Evolution ofC-V and I-Vcharacteristics for a commercial 600 V GaN GIT power device under repetitive short-circuit tests[J]. Microelectronics Reliability, 2018, 88: 652-655.
[6] REN J, TANG C W, FENG H, et al. A novel 700 V monolithically integrated Si-GaN cascoded field effect transistor[J]. IEEE Electron Device Letters, 2018, 39(3): 394-396.
[7] HU Q L, LI S C, LI T Y, et al. Channel engineering of normally-off AlGaN/GaN MOS-HEMTs by atomic layer etching and high-κdielectric[J]. IEEE Electron Device Letters, 2018, 39(9): 1377-1380.
[8] WONG K Y, CHEN W J, CHEN K J. Integrated voltage reference generator for GaN smart power chip technology[J]. IEEE Transactions on Electron Devices, 2010, 57(4): 952-955.
[9] LIAO C H, YANG S H, LIAO M Y, et al. 3.8 A 23.6 ppm/℃ monolithically integrated GaN reference voltage design with temperature range from －50℃ to 200℃ and supply voltage range from 3.9 to 24V[C]// 2020 IEEE International Solid-State Circuits Conference-(ISSCC). IEEE, San Francisco, CA, 2020: 72-74.
[10] LI A, SHEN Y, LI Z Q, et al. A monolithically integrated 2-transistor voltage reference with a wide temperature range based on AlGaN/GaN technology[J]. IEEE Electron Device Letters, 2022, 43(3): 362-365.
[11] ALIM M A, AFRIN S, REZAZADEH A A, et al. Thermal response and correlation between mobility and kink effect in GaN HEMTs[J]. Microelectronic Engineering, 2020, 219: 111148.
[12] JEON D Y, KOH Y, CHO C Y, et al. Impact of temperature-dependent series resistance on the operation of AlGaN/GaN high electron mobility transistors[J]. AIP Advances, 2021, 11(11): 115203.
[13] TAN W S, UREN M J, FRY P W, et al. High temperature performance of AlGaN/GaN HEMTs on Si substrates[J]. Solid-State Electronics, 2006, 50(3): 511-513.
[14] LI B K, CHEN K J, LAU K M, et al. Characterization of fluorine-plasma-induced deep centers in AlGaN/GaN heterostructure by persistent photoconductivity[J]. Physica Status Solidi C, 2008, 5(6): 1892-1894.
[15] DONG Y, XIE Z L, CHEN D J, et al. Effects of dissipative substrate on the performances of enhancement mode AlInN/GaN HEMTs[J]. International Journal of Numerical Modelling: Electronic Networks, Devices and Fields, 2019, 32(1): e2482.
[16] 谷文萍, 郝跃, 张进城, 等. 高场应力及栅应力下AlGaN/GaN HEMT器件退化研究[J]. 物理学报, 2009, 58(1): 511-517.
[17] STOCKMAN A, CANATO E, MENEGHINI M, et al. Threshold voltage instability mechanisms in p-GaN gate AlGaN/GaN HEMTs[C]// Proceedings of the 31st International Symposium on Power Semiconductor Devices & ICs, IEEE, Shanghai,2019: 287-290.
[18] Meneghini M, Bisi D, Marcon D, et al. Trapping in GaN-based metal-insulator-semiconductor transistors: role of high drain bias and hot electrons[J]. Applied Physics Letters, 2014, 104(14): 143505.

中国半导体行业协会封装分会会刊

中国电子学会电子制造与封装技术分会会刊

一种高温度稳定性的GaN基准电压源设计^*

Design of a GaN Reference Voltage Source with HighTemperature Stability

PDF

可视化

摘要/Abstract

引用本文

使用本文

参考文献

相关文章 12

编辑推荐

Metrics

本文评价

[1]	石浩,王雯洁,付登源,梁宗文,王溯源,张良,章军云. 一种用于生产的GaN HEMT器件空气桥的设计[J]. 电子与封装, 2023, 23(9): 90403-.
[2]	许超;吴叶;常伟;李珂. 一种输出可调的高精度开关电容基准电压源[J]. 电子与封装, 2023, 23(2): 20302-.
[3]	秦尧;明鑫;叶自凯;庄春旺;张波. GaN HEMT及GaN栅驱动电路在DToF激光雷达中的应用^*[J]. 电子与封装, 2023, 23(1): 10103-.
[4]	匡维哲;周琦;陈佳瑞;杨凯;张波. 自热效应下P-GaN HEMT的阈值漂移机理^*[J]. 电子与封装, 2022, 22(8): 80401-.
[5]	伍振;周琦;潘超武;杨宁;张波. 重复短路应力下p-GaN HEMT器件的阈值电压退化机制^*[J]. 电子与封装, 2022, 22(6): 60401-.
[6]	穆昌根, 党睿, 袁鹏, 陈大正. 增强型GaN HEMT器件的实现方法与研究进展^*[J]. 电子与封装, 2022, 22(10): 100401-.
[7]	鲍婕,周德金,陈珍海,宁仁霞,吴伟东,黄伟. GaN HEMT器件封装技术研究进展^*[J]. 电子与封装, 2021, 21(2): 20101-.
[8]	鲍婕,周德金,陈珍海,宁仁霞,吴伟东,黄伟. GaN HEMT电力电子器件技术研究进展^*[J]. 电子与封装, 2021, 21(2): 20102-.
[9]	周德金, 何宁业, 宁仁霞, 许媛, 徐宏, 陈珍海, 黄伟, 卢红亮. GaN HEMT栅驱动技术研究进展^*[J]. 电子与封装, 2021, 21(2): 20104-.
[10]	吴素贞;徐政;徐海铭;宋思德;谢儒彬;洪根深;吴建伟;贺琪. MIS型GaN HEMT器件的X-ray辐射总剂量效应研究[J]. 电子与封装, 2020, 20(12): 120403-.
[11]	童伟，任军. 高速光接收机中低温漂基准电压源设计[J]. 电子与封装, 2018, 18(12): 21-25.
[12]	罗治民，刘伯权，郭佳佳. 低温漂高抑制比带隙基准电压源设计[J]. 电子与封装, 2018, 18(12): 26-29.