中国半导体行业协会封装分会会刊

中国电子学会电子制造与封装技术分会会刊

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电子与封装 ›› 2023, Vol. 23 ›› Issue (6): 060302 . doi: 10.16257/j.cnki.1681-1070.2023.0060

• 电路与系统 • 上一篇    下一篇

一种高精度CMOS温度传感器校准电路

卓琳;邵杰;任凤霞;万书芹;章宇新;黄立朝   

  1. 中国电子科技集团公司第五十八研究所,江苏 无锡 214035
  • 收稿日期:2022-09-30 出版日期:2023-06-26 发布日期:2023-06-26
  • 作者简介:卓琳(1984—),女,江苏无锡人,硕士,工程师,现从事集成电路设计方向的研究。

Calibration Circuit for High Precision CMOS TemperatureSensor

ZHUO Lin,SHAO Jie,REN Fengxia,WAN Shuqin,ZHANG Yuxin,HUANG Lichao   

  1. China Electronics Technology Group Corporation No.58 Research Institute,Wuxi 214035, China
  • Received:2022-09-30 Online:2023-06-26 Published:2023-06-26

摘要: 针对集成式传感器中CMOS器件非理想因素导致的测量误差,设计了一种数字校准电路,校准电路由存储模块、失调误差校准模块和增益误差校准等模块组成。因模拟器件受温度影响较大,不同温度的增益线性度不同,所以增益误差采用分温度区间进行校准。电路采用0.18μm CMOS工艺实现,校准后温度传感器误差可提高到-0.05~+0.15℃。

关键词: 温度传感器, CMOS工艺, 误差校准

Abstract: Aiming at the measurement errors caused by the non-ideal factors of CMOS devices in integrated sensors, a digital calibration circuit is designed. The calibration circuit is composed of a memory module, an offset error calibration module, a gain error calibration moduleand so on.Because the analog devices are greatly influenced by temperature and the gain linearity varies at different temperatures, the gain error is calibrated by sub-temperature intervals.The circuit is implemented in 0.18 μm CMOS technology, and the error of the temperature sensor can be improved to -0.05~+0.15 ℃ after calibration.

Key words: temperature sensor, CMOS technology, error calibration

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