GaN器件辐照效应与LDO电路的单粒子敏感点协同设计研究*

doi:10.16257/j.cnki.1681-1070.2024.0010

电子与封装 ›› 2024, Vol. 24 ›› Issue (1): 010404 . doi: 10.16257/j.cnki.1681-1070.2024.0010

GaN器件辐照效应与LDO电路的单粒子敏感点协同设计研究^*

朱峻岩¹;张优¹;王鹏¹;黄伟¹;张卫¹;邱一武²;周昕杰²

1. 复旦大学微电子学院，上海? 200433；2. 中科芯集成电路有限公司，江苏无锡 ?214072

收稿日期:2023-08-25 出版日期:2024-01-15 发布日期:2024-01-15
作者简介:朱峻岩 (2001—)，男，福建福州人，硕士研究生，主要从事GaN功率器件及其集成电路研究。

Collaborative Design Study of the Radiation Effect of GaN Devices and the Single Event Irradiation Sensitive Point of LDO Circuits

ZHU Junyan¹, ZHANG You¹, WANG Peng¹, HUANG Wei¹, ZHANG Wei¹, QIU Yiwu², ZHOU Xinjie²

1. School of Microelectronics, FudanUniversity, Shanghai 200443, China;2. China Key System & Integrated Circuit Co., Ltd., Wuxi 214072, China

Received:2023-08-25 Online:2024-01-15 Published:2024-01-15

摘要/Abstract

摘要： 创新地开展p型栅GaN器件的单粒子辐照与建模研究，提取的单粒子激励电流首次被加载用于全GaN的低压差线性稳压器（LDO）稳压电路的单粒子设计中，获得了该电路单粒子敏感节点，最终得到该节点在重载状态与轻载状态时对应的单粒子瞬态（SET）响应分别为500 mV/60 ns，1210 mV/60 ns。上述研究建立起GaN器件-全GaN基电路的T-CAD/SPICE单粒子效应协同设计方法。

关键词: GaN辐照效应, GaNLDO, 抗辐照加固, p型栅GaN器件

Abstract: Single event irradiation and modeling of p-gate GaN devices are innovatively carried out. The extracted single event excitation current is used for the first time into the single event design of a full GaN low dropout regulator (LDO) voltage stabilizing circuit, and a single event sensitive node of the circuit is obtained. The single event transient (SET) responses of the node corresponding to the heavy load state and the light load state are 500 mV/60 ns and 1210 mV/60 ns respectively. The above study establishes a T-CAD/SPICE single event effect collaborative design method for GaN devices and all GaN based circuits.

Key words: GaN irradiation effect, GaN LDO, radiation hardening, p-gate GaN device

中图分类号:

TN307

朱峻岩;张优;王鹏;黄伟;张卫;邱一武;周昕杰. GaN器件辐照效应与LDO电路的单粒子敏感点协同设计研究^*[J]. 电子与封装, 2024, 24(1): 010404 .

ZHU Junyan, ZHANG You, WANG Peng, HUANG Wei, ZHANG Wei, QIU Yiwu, ZHOU Xinjie. Collaborative Design Study of the Radiation Effect of GaN Devices and the Single Event Irradiation Sensitive Point of LDO Circuits[J]. Electronics & Packaging, 2024, 24(1): 010404 .

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中国半导体行业协会封装分会会刊

中国电子学会电子制造与封装技术分会会刊

GaN器件辐照效应与LDO电路的单粒子敏感点协同设计研究^*

Collaborative Design Study of the Radiation Effect of GaN Devices and the Single Event Irradiation Sensitive Point of LDO Circuits

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