关键词: SRAM加固, DICE, 分离位线, 单粒子翻转

Abstract: Cell hardened is an important part in the design of SRAM radiation hardened. The classic DICE unit possesses high efficiency of anti-SEU in the static state of SRAM，but it is incapable of resisting SET in the dynamic state. A separated-bit-line structure is proposed in the paper and this new memory cell has got the ability to immunize Single Event Transient in any working period besides anti-SEU. Furthermore a double module redundancy method is presented to resolve the upset in the peripheral circuits. SRAM with this new structure will get a strong ability of anti-Single Event Effects and high security of data for the multiple aspects of hardening design.

Key words: SRAM hardening, DICE, separated-bit-line, single event upset