GaN HEMT栅驱动技术研究进展*

doi:10.16257/j.cnki.1681-1070.2021.0213

电子与封装 ›› 2021, Vol. 21 ›› Issue (2): 020104 . doi: 10.16257/j.cnki.1681-1070.2021.0213

所属专题： GaN 电子器件与先进集成

• “GaN 电子器件与先进集成”专题 • 上一篇下一篇

GaN HEMT栅驱动技术研究进展^*

周德金^1,2,何宁业³,宁仁霞³,许媛³,徐宏²,陈珍海^2,3,黄伟^1,4,卢红亮¹

1.复旦大学微电子学院，上海　200443；2.清华大学无锡应用技术研究院，江苏无锡　214072；3.黄山学院智能微系统安徽省工程技术研究中心，安徽黄山　245041；4.桂林电子科技大学广西精密导航技术与应用重点实验室，广西桂林　541004

收稿日期:2020-12-16 出版日期:2021-02-24 发布日期:2021-02-24
作者简介:周德金（1982—），男，江苏徐州人，博士研究生，主要研究方向是功率半导体器件及功率集成技术。

Advances in GaN HEMT Gate Driver Technology Research

ZHOU Dejin^1,2, HE Ningye³, NING Renxia³, XU Yuan³, XU Hong², CHEN Zhenhai^2,3, HUANG Wei^1,4, LU Hongliang¹

1.School of Microelectronics, Fudan University, Shanghai 200443, China ; 2.Wuxi Research Institute of Applied Technologies Tsinghua University, Wuxi 214072, China; 3. Engineering Technology Research Center of Intelligent Microsystems, Anhui Province, Huangshan University, Huangshan 245041, China; 4.Guangxi Key Laboratory of Precision Navigation Technology and Application, Guilin University of Electronic Technology, Guilin 541004, China

Received:2020-12-16 Online:2021-02-24 Published:2021-02-24

摘要/Abstract

摘要： GaN HEMT器件由于其击穿场强高、导通电阻低等优越的性能，在高效、高频功率转换领域中有着广泛的应用前景。栅驱动芯片对于GaN HEMT器件应用起着至关重要的作用。介绍了GaN HEMT的器件特性和驱动要求，对其栅驱动芯片的典型架构和每种芯片架构各自的关键实现技术研究现状进行了综述。同时介绍了GaN基单片集成功率IC的发展状况，对栅驱动芯片的实现技术进行了总结。

关键词: GaNHEMT, 栅驱动电路, 电平移位, 绝缘隔离, 半桥

Abstract: GaN HEMT devices have a wide application prospect in high efficiency and high frequency power converters, due to their excellent features such as high breakdown voltage and low on-resistance. The gate driver plays the key effort for the application of GaN HEMT devices. In this paper, the characteristic and driving requirement of GaN HEMT devices are introduced. And the global research status of chip structural and key technical issues of each structural for gate driver IC are reviewed. Then the research status of all-GaN based power IC is introduced. Finally, the technology development trend of GaN HEMT gate driver technology is summarized.

Key words: GaNHEMT, gatedriver, level-shift, galvanicallyisolate, halfbridge

中图分类号:

TN305.94

周德金, 何宁业, 宁仁霞, 许媛, 徐宏, 陈珍海, 黄伟, 卢红亮. GaN HEMT栅驱动技术研究进展^*[J]. 电子与封装, 2021, 21(2): 020104 .

ZHOU Dejin, HE Ningye, NING Renxia, XU Yuan, XU Hong, CHEN Zhenhai, HUANG Wei, LU Hongliang. Advances in GaN HEMT Gate Driver Technology Research[J]. Electronics & Packaging, 2021, 21(2): 020104 .

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中国半导体行业协会封装分会会刊

中国电子学会电子制造与封装技术分会会刊

GaN HEMT栅驱动技术研究进展^*

Advances in GaN HEMT Gate Driver Technology Research

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