基于新型绝缘栅触发晶闸管的高功率准矩形脉冲源

doi:10.16257/j.cnki.1681-1070.2021.1215

电子与封装 ›› 2021, Vol. 21 ›› Issue (12): 120302 . doi: 10.16257/j.cnki.1681-1070.2021.1215

基于新型绝缘栅触发晶闸管的高功率准矩形脉冲源

陈楠¹;陈万军¹;尚建蓉²;刘超¹;李青岭¹;孙瑞泽¹;李肇基¹;张波¹

1.电子科技大学电子科学与工程学院，成都　610054；2.陆军装备部驻重庆地区军事代表局驻成都地区第二军事代表室，成都　610054

收稿日期:2021-03-09 出版日期:2021-12-28 发布日期:2021-04-29
作者简介:陈楠（1996—），男，四川广安人，硕士研究生，研究方向为新型功率半导体器件与集成电路和系统。

A High-Power Quasi Rectangular Pulse GenerationBased on a Novel Insulated Gate Trigger Thyristor

CHEN Nan¹, CHEN Wanjun¹, SHANG Jianrong², LIU Chao¹, LI Qingling¹, SUN Ruize¹, LI Zhaoji¹, ZHANG Bo¹

1. School of Electronic Science and Engineering,University of Electronic Science and Technology of China, Chengdu610054, China;2. The Second Military Representative Office in Chengdu of the Chongqing Military Representative Bureau of the Army Equipment Department, Chengdu 610054, China

Received:2021-03-09 Online:2021-12-28 Published:2021-04-29

摘要/Abstract

摘要： 提出了一种基于新型绝缘栅触发晶闸管（Insulated Gate Trigger Thyristor, IGTT）的高功率准矩形脉冲源。为实现形成准矩形脉冲波所需的极低开关器件电阻，采用IGTT作为开关器件，其具有导通电阻低、开启速度快的优点，非常好地满足了准矩形脉冲波对高峰值电流（I_P）和电流上升率（di/dt）的需求。实验结果表明，相较于常规绝缘栅双极型晶体管（Insulated Gate Bipolar Transistor，IGBT），基于IGTT的准矩形脉冲源峰值电流提升了50%、di/dt提升400%，且具有更好的矩形波平顶特性。在工作电压U₀= 1200 V下，准矩形脉冲源产生了脉冲前沿约为350 ns、平顶宽度为3.05 μs、峰值电流为3.7 kA、前沿di/dt =11.3 kA/μs、平顶纹波系数（ζ）仅为2.3%的准矩形脉冲电流，实现了优异的准矩形脉冲特性，为新一代全固态、紧凑型、小型化准矩形脉冲源设计提供了一种极具前景的解决方案。

关键词: 脉冲功率, 准矩形脉冲, 绝缘栅触发晶闸管, 电流上升率

Abstract: A quasi-rectangular pulse generation based on a novel insulated gate trigger thyristor (IGTT) is proposed. In order to realize ultra-low switch device resistance for forming quasi-rectangular pulse wave, the IGTT is used as switch device, which has the advantages of low on-resistance and fast opening speed, and the requirements of quasi rectangular pulse wave for peak current (I_P) and current rise rate (di/dt) are well satisfied. The experimental results show that, compared with conventional insulated gate bipolar transistor (IGBT), the quasi-rectangular pulse current of IGTT achieves 50% higher peak current (I_P) and 400% higher di/dt. At higher working voltage U₀= 1200 V, the quasi-rectangular pulse generation generates a quasi-rectangular current pulse with rising edge of 350 ns, pulse duration of 3.05 ms, peak current of 3.7 kA, di/dt of 11.3 kA/μs and maximum fluctuation (ζ) of 2.3%, exhibiting excellent quasi-rectangular current pulse performances, which provides a promising solution for all-solid-state, compact and miniaturized quasi-rectangular pulse source.

Key words: pulsepower, quasi-rectangularpulse, insulatedgatetriggerthyristor, currentriserate

中图分类号:

TN389
TJ45

陈楠, 陈万军, 尚建蓉, 刘超, 李青岭, 孙瑞泽, 李肇基, 张波. 基于新型绝缘栅触发晶闸管的高功率准矩形脉冲源[J]. 电子与封装, 2021, 21(12): 120302 .

CHEN Nan, CHEN Wanjun, SHANG Jianrong, LIU Chao, LI Qingling, SUN Ruize, LI Zhaoji, ZHANG Bo. A High-Power Quasi Rectangular Pulse GenerationBased on a Novel Insulated Gate Trigger Thyristor[J]. Electronics & Packaging, 2021, 21(12): 120302 .

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中国半导体行业协会封装分会会刊

中国电子学会电子制造与封装技术分会会刊

基于新型绝缘栅触发晶闸管的高功率准矩形脉冲源

A High-Power Quasi Rectangular Pulse GenerationBased on a Novel Insulated Gate Trigger Thyristor

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