基于0.18 μm BCD工艺的抗辐射ESD防护器件GGNMOS优化设计
陆素先, 程淩, 朱琪, 李现坤, 李娟, 严正君
Optimized Design of Radiation-Hardened ESD Protection Device GGNMOS Based on 0.18 μm BCD Process
LU Suxian, CHENG Ling, ZHU Qi, LI Xiankun, LI Juan, YAN Zhengjun
电子与封装
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DOI: 10.16257/j.cnki.1681-1070.2025.0072
