基于0.18 μm BCD工艺的抗辐射ESD防护器件GGNMOS优化设计
陆素先，程淩，朱琪，李现坤，李娟，严正君
Optimized Design of Radiation-Hardened ESD Protection Device GGNMOS Based on 0.18 μm BCD Process
LU Suxian, CHENG Ling, ZHU Qi, LI Xiankun, LI Juan, YAN Zhengjun
电子与封装
.
2025, (6): 60401
.
DOI: 10.16257/j.cnki.1681-1070.2025.
0072
