包含积累层沟道和4H-SiC/Si异质结集电区的SiC基RC-IGBT

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叶枝展1, 2, 韦文生1, 2

SiC Based RC-IGBT with 4H-SiC/Si Heterojunction Electrode and Accumulation Layer Channel

YE Zhizhan1, 2, WEI Wensheng1, 2

电子与封装 . 0, (): 0 -0 . DOI: 10.16257/j.cnki.1681-1070.2026.0071