抑制剂分子结构对电沉积铜镀层电学性能的影响
张耿华1, 2, 高丽茵1, 2, 曾方元1, 刘志权3
Effect of Inhibitor Molecular Structure on the Electrical Properties of Electrodeposited Copper Plating
ZHANG Genghua1, 2, GAO Liyin1, 2, Zeng Fangyuan1, LIU Zhiquan3
电子与封装
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0, (): 0
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DOI: 10.16257/j.cnki.1681-1070.2026.0117
