碳化硅器件封装进展综述及展望*

doi:10.16257/j.cnki.1681-1070.2022.0502

摘要/Abstract

摘要： 碳化硅禁带宽、临界击穿场强大、热导率高，具有高压、高温、高频等优点。应用于硅基器件的传统封装方式寄生电感参数较大，难以匹配碳化硅器件的快速开关特性，同时在高温工况下封装可靠性大幅降低，为充分发挥碳化硅器件的优势需要改进现有的封装技术。针对上述挑战，对国内外现有的低寄生电感封装方式进行了总结。分析了现有的高温封装技术，结合新能源电力系统的发展趋势，对SiC器件封装技术进行归纳和展望。

关键词: SiC, 低寄生电感, 混合封装, 3D封装, 平面互连, 双面散热, 高温封装

Abstract: Silicon carbide (SiC) has the advantages of wide forbidden band, strong critical breakdown field, high thermal conductivity, high voltage, high temperature and high frequency. The traditional packaging method applied to silicon-based devices has large parasitic inductance parameters, which is difficult to match the fast switching characteristics of SiC devices. At the same time, the packaging reliability is greatly reduced under high temperature conditions. In order to give full play to the advantages of SiC devices, it is necessary to improve the existing packaging technology. In view of the above challenges, this paper classifies and compares the existing low parasitic inductance packaging methods at home and abroad. The existing high temperature packaging technology is analyzed. Finally, combined with the development trend of new energy power system, the SiC device packaging technology is summarized and prospected.

Key words: SiC, lowparasiticinductance, hybridpackaging, 3Dpackaging, planarinterconnection, double-sidedheatdissipation, hightemperaturepackaging

中图分类号:

TN431

杜泽晨;张一杰;张文婷;安运来;唐新灵;杜玉杰;杨霏;吴军民. 碳化硅器件封装进展综述及展望^*[J]. 电子与封装, 2022, 22(5): 050102 .

DU Zechen, ZHANG Yijie, ZHANG Wenting, AN Yunlai, TANG Xinling, DU Yujie, YANG Fei, WU Junmin. Review and Prospect of SiC Device Packaging[J]. Electronics & Packaging, 2022, 22(5): 050102 .

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吴军民（1971—），男，江苏扬州人，正高级工程师，主要研究方向为大功率电力电子器件的设计及碳化硅大功率电力电子器件。

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中国半导体行业协会封装分会会刊

中国电子学会电子制造与封装技术分会会刊

碳化硅器件封装进展综述及展望^*

Review and Prospect of SiC Device Packaging

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