基于IMPATT管固态器件的太赫兹源

doi:10.16257/j.cnki.1681-1070.2018.0044

电子与封装 ›› 2018, Vol. 18 ›› Issue (4): 33 -37. doi: 10.16257/j.cnki.1681-1070.2018.0044

基于IMPATT管固态器件的太赫兹源

潘结斌，谢斌，程怀宇

华东光电集成器件研究所，安徽蚌埠 233030

收稿日期:2018-01-15 出版日期:2018-04-24 发布日期:2018-04-24
作者简介:潘结斌（1971—），男，安徽怀宁人，硕士学历，华东光电集成器件研究所高级工程师，研究方向为毫米波固态电路设计。

Terahertz Source Based on IMPATT Diode Solid State Devices

PAN Jiebin,XIE Bin,CHENG Huaiyu

East China Institute of Photo-Electron IC,Bengbu 233030,China

Received:2018-01-15 Online:2018-04-24 Published:2018-04-24

摘要/Abstract

摘要： 太赫兹频谱有很多优越特性，在生物医疗、安全检查及军事领域中具有重要的应用前景。太赫兹源是太赫兹波领域研究中的关键技术，制约着太赫兹技术的发展。从介绍太赫兹源的研究与发展动态出发，阐述了雪崩渡越时间二极管（IMPATT）器件的工作机理、等效分析模型及注锁牵引稳频振荡理论，给出了几种基于IMPATT管获取电子学固态太赫兹源的方法。

关键词: 固态电子学, IMPATT管, 电路模型, 稳频振荡, 太赫兹源

Abstract: Terahertz spectrum has many advantages,and has an important application prospect in biological medicine,security chech and military field.Terahertz source is the key technology in the field of terahertz wave,which restricts the development of terahertz technology.This paper introduces the dynamic for the research and the development of terahertz source.The article briefly introduces the working mechanism,equivalent analysis model and theory of oscillation frequency stabilization by injection lock of IMPATT diode device.Several methods for obtaining solid-state terahertzsource based on IMPATT diode are given.

Key words: solid-state electronics, IMPATT diode, circuit model, steady frequency oscillation condition, Terahertzsource

中图分类号:

TN312+.7

潘结斌, 谢斌, 程怀宇. 基于IMPATT管固态器件的太赫兹源[J]. 电子与封装, 2018, 18(4): 33 -37.

PAN Jiebin, XIE Bin, CHENG Huaiyu. Terahertz Source Based on IMPATT Diode Solid State Devices[J]. Electronics & Packaging, 2018, 18(4): 33 -37.

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中国电子学会电子制造与封装技术分会会刊

基于IMPATT管固态器件的太赫兹源

Terahertz Source Based on IMPATT Diode Solid State Devices

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