GaN P沟道功率器件及集成电路研究进展*

doi:10.16257/j.cnki.1681-1070.2024.0152

摘要/Abstract

摘要： GaN功率器件具有导通电阻小、开关速度快、击穿电压高等特点，已广泛应用于高频、高功率的电力电子转换器中。为充分发挥GaN器件的性能优势，将功率电子器件和控制器、驱动等外围电路进行全GaN单片集成是最小化寄生参数的有效手段，也是GaN功率集成电路的重要发展方向。着眼于利用二维空穴气（2DHG）的GaN基P型器件的发展进程，论述了P型器件面临的技术难题，进一步分析了其对于GaN互补逻辑电路集成发展的重要性，讨论了相关的GaN集成工艺平台，对器件结构及制备工艺的创新、GaN集成技术面临的相关挑战进行了分析与展望。

关键词: GaN, 二维空穴气, P型器件, 互补逻辑集成

Abstract: GaN power devices have been widely used in high-frequency, high-power power electronic converters due to their characteristics of low on-resistance, fast switching speed and high break-down voltage. In order to give full play to the performance advantages of GaN devices, the all-GaN monolithic integration of power electronic devices and peripheral circuits such as controllers and drivers is an effective way to minimize parasitic parameters, which is an important development direction of GaN power integrated circuits. Focusing on the development process of GaN-based P-type devices utilizing two-dimensional hole gas (2DHG), the technical difficulties faced by P-type devices are discussed. Furthermore, their importance for the development of GaN complementary logic circuit integration is demonstrated. The related GaN integration process platforms are discussed, and the innovation of device structure and fabrication processes, as well as the related challenges faced by GaN integration technology are analyzed and prospected.

Key words: GaN, two-dimensional hole gas, P-type device, complementary logic integration

中图分类号:

TN432

朱霞, 王霄, 王文倩, 李杨, 李秋璇, 闫大为, 刘璋成, 陈治伟, 敖金平. GaN P沟道功率器件及集成电路研究进展^*[J]. 电子与封装, 2024, 24(11): 110401 .

ZHU Xia, WANG Xiao, WANG Wenqian, LI Yang, LI Qiuxuan, YAN Dawei, LIU Zhangcheng, CHEN Zhiwei, AO Jinping. Research Progress in GaN P-Channel Power Devices and Integrated Circuits[J]. Electronics & Packaging, 2024, 24(11): 110401 .

参考文献

[1] ZHANG L, ZHENG Z S, LOU X T. A review of WBG and Si devices hybrid applications[J]. Chinese Journal of Electrical Engineering, 2021, 7(2): 1-20.
[1] [2] DING X F, ZHOU Y, CHENG J W. A review of gallium nitride power device and its applications in motor drive[J]. CES Transactions on Electrical Machines and Systems, 2019, 3(1): 54-64.
[3]黄火林, 孙楠. GaN基增强型HEMT器件的研究进展 [J]. 电子与封装, 2023, 23(1): 010108.
[4] JIANG K, SUN X J, SHI Z M, et al. Quantum engineering of non-equilibrium efficient p-doping in ultra-wide band-gap nitrides[J]. Light, Science & Applications, 2021, 10(1): 69.
[5] SHATALOV M, SIMIN G, ZHANG J P, et al. GaN/AlGaN p-channel inverted heterostructure JFET[J]. IEEE Electron Device Letters, 2002, 23(8): 452-454.
[6] ZHANG Z X, ENCOMENDERO J, CHAUDHURI R, et al. Polarization-induced 2D hole gases in pseudomorphic undoped GaN/AlN heterostructures on single-crystal AlN substrates[J]. Applied Physics Letters, 2021, 119(16): 1-7.
[7] CHAUDHURI R, BADER S J, CHEN Z, et al. A polarization-induced 2D hole gas in undoped gallium nitride quantum wells[J]. Science, 2019, 365(6460): 1454-1457.
[8] ZIMMERMANN T, NEUBURGER M, KUNZE M, et al. P-channel InGaN-HFET structure based on polarization doping[J]. IEEE Electron Device Letters, 2004, 25(7): 450-452.
[9] ZHANG K X, SUMIYA M, LIAO M Y, et al. P-Channel InGaN/GaN heterostructure metal-oxide-semiconductor field effect transistor based on polarization-induced two-dimensional hole gas[J]. Scientific Reports, 2016, 6: 23683.
[10] LI G W, JENA D, WANG R H, et al. Polarization-induced GaN-on-insulator E/D mode p-channel heterostructure FETs[J]. IEEE Electron Device Letters, 2013, 34(7): 852-854.
[11] KUMAR A, DE SOUZA M M. Extending the bounds of performance in E-mode p-channel GaN MOSHFETs[C]//2016 IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA, 2016.
[12] RAJ A, KRISHNA A, HATUI N, et al. Demonstration of a GaN/AlGaN superlattice-based p-channel FinFET with high ON-current[J]. IEEE Electron Device Letters, 2020, 41(2): 220-223.
[13] CHOWDHURY N, XIE Q Y, PALACIOS T. Tungsten-Gated GaN/AlGaN p-FET with Imax > 120 mA/mm on GaN-on-Si[J]. IEEE Electron Device Letters, 2022, 43(4): 545-548.
[14] CHOWDHURY N, XIE Q Y, PALACIOS T. Self-aligned E-mode GaN p-channel FinFET with ION > 100 mA/mm and ION/IOFF > 10?[J]. IEEE Electron Device Letters, 2022, 43(3): 358-361.
[15] DU H H, LIU Z H, HAO L, et al. High-performance E-mode p-channel GaN FinFET on silicon substrate with high ION/IOFF and high threshold voltage[J]. IEEE Electron Device Letters, 2022, 43(5): 705-708.
[16] ZHENG Z Y, ZHANG L, SONG W J, et al. Gallium nitride-based complementary logic integrated circuits[J]. Nature Electronics, 2021, 4: 595-603.
[17] CHENG J J, WU S Y, YI B, et al. A lateral power p-channel trench MOSFET improved by variation vertical doping[J]. IEEE Transactions on Electron Devices, 2021, 68(4): 2138-2141.
[18] YIN Y D, LEE K B. High-performance enhancement-mode p-channel GaN MISFETs with steep subthreshold swing[J]. IEEE Electron Device Letters, 2022, 43(4): 533-536.
[19] JIN H, JIANG Q M, HUANG S, et al. An enhancement-mode GaN p-FET with improved breakdown voltage[J]. IEEE Electron Device Letters, 2022, 43(8): 1191-1194.
[20] KE J H, LEE C S, LI Y X, et al. High-breakdown p-channel GaN MOS-HFETs with Al2O3-dielectric and drain field-plate[J]. IEEE Journal of the Electron Devices Society, 2023, 11: 421-425.
[21] LIU S H, HWANG J M, HWANG Z H, et al. Ohmic contact to p-type GaN using a novel Ni/Cu scheme[J]. Applied Surface Science, 2003, 212: 907-911.
[22] NAKAJIMA A, KUBOTA S, TSUTSUI K, et al. GaN-based complementary metal-oxide-semiconductor inverter with normally off Pch and Nch MOSFETs fabricated using polarisation-induced holes and electron channels[J]. IET Power Electronics, 2018, 11(4): 689-694.
[23] HE J L, ZHONG Y Z, ZHOU Y, et al. Recovery of p-GaN surface damage induced by dry etching for the formation of p-type Ohmic contact[J]. Applied Physics Express, 2019, 12(5): 055507.
[24] WANG J, LU S, CAI W T, et al. Ohmic contact to p-type GaN enabled by post-growth diffusion of magnesium[J]. IEEE Electron Device Letters, 2022, 43(1): 150-153.
[25] ZHANG T, LI X B, PU T F, et al. Transparent ohmic contact for boron doped diamond using p-type NiO film synthesized through oxidation[J]. Materials Science in Semiconductor Processing, 2020, 105: 104740.
[26] TANG C Y, FU C, DU F Z, et al. A robust Ni/Au process and mechanism for p-type ohmic contact applied to GaN p-FETs[J]. Journal of Alloys and Compounds, 2024, 978: 173499.
[27] PYTEL S G, LENTIJO S, KOUDYMOV A, et al. AlGaN/GaN MOSHFET integrated circuit power converter[C]//2004 IEEE 35th Annual Power Electronics Specialists Conference (IEEE Cat. No.04CH37551), Aachen, Germany, 2004: 579-584.
[28] REN J, TANG C W, FENG H, et al. A novel 700 V monolithically integrated Si-GaN cascoded field effect transistor[J]. IEEE Electron Device Letters, 2018, 39(3): 394-396.
[29] REINER R, WALTEREIT P, WEISS B, et al. Monolithically integrated power circuits in high-voltage GaN-on-Si heterojunction technology[J]. IET Power Electronics, 2018, 11(4): 681-688.
[30] SUN R Z, LIANG Y C, YEO Y C, et al. All-GaN power integration: devices to functional subcircuits and converter ICs[J]. IEEE Journal of Emerging and Selected Topics in Power Electronics, 2020, 8(1): 31-41.
[31] WANG W S, LI A, CUI M, et al. Monolithic comparators using E/D-mode AlGaN/GaN MIS-HEMTs for high-temperature applications[C]//2021 18th China International Forum on Solid State Lighting & 2021 7th International Forum on Wide Bandgap Semiconductors (SSLChina: IFWS), Shenzhen, China, 2021: 33-35.
[32]张彤, 刘树强, 何亮, 等. GaN基互补型逻辑电路的研究进展及挑战 [J]. 电子与封装, 2023, 23(1): 010101.
[33] HAHN H, REUTERS B, KOTZEA S, et al. First monolithic integration of GaN-based enhancement mode n-channel and p-channel heterostructure field effect transistors[C]//72nd Device Research Conference, Santa Barbara, CA, USA, 2014: 259-260.
[34] CHU R M, CAO Y, CHEN M, et al. An experimental demonstration of GaN CMOS technology[J]. IEEE Electron Device Letters, 2016, 37(3): 269-271.
[35] ZHENG Z Y, SONG W J, ZHANG L, et al. Monolithically integrated GaN ring oscillator based on high-performance complementary logic inverters[J]. IEEE Electron Device Letters, 2021, 42(1): 26-29.
[36] POLYNTSEV E S, PROKAZINA I Y, KAGADEY V A, et al. IC development of CMOS PWM controller for driving GaN-based switching mode power converters[C]//2023 IEEE 24th International Conference of Young Professionals in Electron Devices and Materials (EDM), Novosibirsk, Russian Federation, 2023: 970-975.
[37] XIE Q Y, YUAN M Y, NIROULA J, et al. Highly-scaled self-aligned GaN complementary technology on a GaN-on-Si platform[C]//2022 International Electron Devices Meeting (IEDM), San Francisco, CA, USA, 2022.
[38] WANG H C, CHEN K L, YANG N, et al. A novel enhancement-mode gallium nitride p-channel metal insulator semiconductor field-effect transistor with a buried back gate for gallium nitride single-chip complementary logic circuits[J]. Electronics, 2024, 13(4): 729.
[39]单月晖, 连潞文, 高媛, 等. GaN技术发展新趋势 [J]. 微电子学, 2022, 52(04): 614–622.

中国半导体行业协会封装分会会刊

中国电子学会电子制造与封装技术分会会刊

GaN P沟道功率器件及集成电路研究进展^*

Research Progress in GaN P-Channel Power Devices and Integrated Circuits

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