In掺杂Sn-1Ag-0.7Cu-3Bi-1.5Sb-xIn/Cu互连结构在热载荷下的损伤

doi:10.16257/j.cnki.1681-1070.2024.0178

电子与封装 ›› 2024, Vol. 24 ›› Issue (12): 120101 . doi: 10.16257/j.cnki.1681-1070.2024.0178

• ICTC2024（集成电路测试大会）专题 • 下一篇

In掺杂Sn-1Ag-0.7Cu-3Bi-1.5Sb-xIn/Cu互连结构在热载荷下的损伤

李泉震,王小京

江苏科技大学材料科学与工程学院，江苏镇江? 212003

收稿日期:2024-10-14 出版日期:2024-12-25 发布日期:2024-12-25
作者简介:李泉震（2000—），男，安徽宿州人，硕士，主要研究方向为微电子互连材料结构损伤的失效实验和模拟。

In-Doped Sn-1Ag-0.7Cu-3Bi-1.5Sb-xIn/Cu Interconnect Structure Damage under Thermal Loading

LI Quanzhen, WANG Xiaojing

Schoolof Materials Science and Engineering,Jiangsu University of Science and Technology, Zhenjiang 212003, China

Received:2024-10-14 Online:2024-12-25 Published:2024-12-25

摘要/Abstract

摘要： 为了应对消费电子端苛刻的热可靠性需求，研究探讨了在170 ℃等温时效条件下，不同热时效时间（0 h、1 000 h、2 000 h）Sn-3.0Ag-0.5Cu、Sn-1Ag-0.7Cu-3Bi-1.5Sb-12In、Sn-1Ag-0.7Cu-3Bi-1.5Sb-17In以及Sn-20In-2.8Ag焊点的熔融特性、微观结构、力学性能。研究发现，掺杂In会降低固相、液相和峰值温度，同时增加熔化范围。当In的质量分数超过12%时，基体中出现γ-InSn₄相，焊点合金出现双相基体。In的加入使焊料/铜界面IMC从Cu₆Sn₅转变为Cu₆(Sn, In)₅。在等温老化过程中，In的加入会促进Cu₆(Sn, In)₅的生长，但能抑制Cu₃(In, Sn)的生长。在时效过程中，12In/Cu焊点的综合剪切性能最佳，具有较高的剪切力和较为优异的剪切强度。该实验对于控制界面化合物的生长、探索掺杂高In对焊点性能的影响以及稳定焊点结构都具有实际意义。

关键词: 关键词:电子封装材料, In掺杂, 热时效, 剪切行为, 微观结构

Abstract: To deal with the demanding thermal reliability needs of the consumer electronics side, The melting characteristics, microstructures, and mechanical properties of Sn-3.0Ag-0.5Cu, Sn-1Ag-0.7Cu-3Bi-1.5Sb-12In, Sn-1Ag-0.7Cu-3Bi-1.5Sb-17In and Sn-20In-2.8Ag solders are investigated under isothermal aging conditions at 170 ℃ for different thermal aging times (0 h, 1000 h, 2000 h). It is found that In doping decreases the solid phase, liquid phase and peak temperatures while increasing the melting range. When the mass fraction of In exceeds 12%, the γ-InSn₄ phase appears in the matrix, and a biphasic matrix appears in the solder joint. The addition of In transforms the solder/copper interface IMC from Cu₆Sn₅ to Cu₆(Sn, In)₅. During isothermal aging, the addition of In promotes the growth of Cu₆(Sn, In)₅ but inhibits the growth of Cu₃(In, Sn). During the aging process, 12In/Cu joint has the best shear properties, with high shear force and excellent shear strength. It holds practical significance for controlling the growth of interface compounds, exploring the impact of high In element doping on solder joint performance, and stabilizing solder joint structures.

Key words: electronic packaging materials, In doping, thermal aging, shear behavior, microstructural

中图分类号:

李泉震,王小京. In掺杂Sn-1Ag-0.7Cu-3Bi-1.5Sb-xIn/Cu互连结构在热载荷下的损伤[J]. 电子与封装, 2024, 24(12): 120101 .

LI Quanzhen, WANG Xiaojing. In-Doped Sn-1Ag-0.7Cu-3Bi-1.5Sb-xIn/Cu Interconnect Structure Damage under Thermal Loading[J]. Electronics & Packaging, 2024, 24(12): 120101 .

参考文献

[1] ZHANG L, HAN J G, HE C W, et al. Reliability behavior of lead-free solder joints in electronic components[J]. Journal of Materials Science: Materials in Electronics, 2013, 24(1): 172-190.
[2] 周阳磊, 吕海强, 何日吉,等. 高温服役电子元器件的焊接工艺研究[J]. 电子与封装, 2024, 24(7): 070205.
[3] JIANG N, ZHANG L, LIU Z Q, et al. Reliability issues of lead-free solder joints in electronic devices[J]. Science and Technology of Advanced Materials, 2019, 20(1): 876-901.
[4] SUH D, KIM D W, LIU P L, et al. Effects of Ag content on fracture resistance of Sn–Ag–Cu lead-free solders under high-strain rate conditions[J]. Materials Science and Engineering: A, 2007, 460/461: 595-603.
[5] LI C M, CHEN S J, CAI S S, et al. Microstructure and shear properties evolution of Mn-doped SAC solder joint under isothermal aging[J]. Journal of Iron and Steel Research International, 2023, 30(8): 1650-1660.
[6] LI Q Z, LI C M, WANG X J, et al. Microstructure and shear properties evolution of minor Fe-doped SAC/Cu substrate solder joint under isothermal aging[J]. Acta Metallurgica Sinica (English Letters), 2024, 37(7): 1279-1290.
[7] LAI Y Q, HU X W, LI Y L, et al. Interfacial microstructure evolution and shear strength of Sn0.7Cu–xNi/Cu solder joints[J]. Journal of Materials Science: Materials in Electronics, 2018, 29(13): 11314-11324.
[8] KANAYAMA H, KONISHI Y, OGAWA F, et al. Effect of additional elements on the low-cycle-fatigue characteristics of Sn-1.0Ag-0.7Cu solder obtained using a miniature-sized specimen[J]. International Journal of Fatigue, 2018, 116: 180-191.
[9] TIAN S, LI S P, ZHOU J, et al. Thermodynamic characteristics, microstructure and mechanical properties of Sn-0.7Cu-xIn lead-free solder alloy[J].Journal of Alloys and Compounds, 2018，742: 835-843.
[10] HU X W, LAI Y Q, JIANG X X, et al. Effects of in addition on the wettability, interfacial characterization and properties of ternary Sn–Cu–Ni solders[J]. Journal of Materials Science: Materials in Electronics, 2018, 29(21): 18840-18851.
[11] TIAN S, LI S P, ZHOU J, et al. Effect of indium addition on interfacial IMC growth and bending properties of eutectic Sn-0.7Cu solder joints[J]. Journal of Materials Science: Materials in Electronics, 2017, 28(21): 16120-16132.
[12] LIU Y, SUN F L, LIU Y, et al. Effect of Ni, Bi concentration on the microstructure and shear behavior of low-Ag SAC-Bi-Ni/Cu solder joints[J]. Journal of Materials Science: Materials in Electronics, 2014, 25(6): 2627-2633.
[13] LEE H T, LIN H S, LEE C S, et al. Reliability of Sn-Ag-Sb lead-free solder joints[J]. Materials Science and Engineering: A, 2005, 407(1-2): 36-44.
[14] WU X L, WU J W, WANG X J, et al. Effect of in addition on microstructure and mechanical properties of Sn–40Bi alloys[J]. Journal of Materials Science, 2020, 55(7): 3092-3106.
[15] FALLAHI H, NURULAKMAL M S, AREZODAR A F, et al. Effect of iron and indium on IMC formation and mechanical properties of lead-free solder[J]. Materials Science and Engineering: A, 2012, 553: 22-31.
[16] WANG J X, YIN M, LAI Z M, et al. Wettability and microstructure of Sn-Ag-Cu-In solder, Transactions of the China Welding Institution, 2011, 32: 69-73.
[17] 王佳星, 姚全斌, 林鹏荣, 等. 电子元器件低温焊接技术的研究进展[J]. 电子与封装, 2022, 22(9): 090202.

中国半导体行业协会封装分会会刊

中国电子学会电子制造与封装技术分会会刊

In掺杂Sn-1Ag-0.7Cu-3Bi-1.5Sb-xIn/Cu互连结构在热载荷下的损伤

In-Doped Sn-1Ag-0.7Cu-3Bi-1.5Sb-xIn/Cu Interconnect Structure Damage under Thermal Loading

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