功率电子器件发展概述

doi:10.16257/j.cnki.1681-1070.2026.0029

电子与封装

• 材料、器件与工艺 • 下一篇

功率电子器件发展概述

张家驹¹，闫闯¹，刘俐²，刘国友³，周洋⁴，刘胜¹，陈志文¹

1．武汉大学集成电路学院，武汉 430072；2.武汉理工大学材料科学与工程学院，武汉 430070；3．新型功率半导体器件国家重点实验室（株洲中车时代电气股份有限公司），湖南株洲 412001；4．阿基米德半导体（合肥）有限公司，合肥 230088

收稿日期:2025-08-03 修回日期:2025-09-11 出版日期:2025-09-26 发布日期:2025-09-26
通讯作者: 陈志文
基金资助:
国家自然科学基金资助项目（62274122）；湖北省杰出青年自然科学基金（2024AFA064）；中央高校基本科研业务费专项资金（413100037）；湖北省“楚天英才计划”科技创新团队项目

Review of the Structural Development of Power Electronics

ZHANG Jiaju¹, YAN Chuang¹, LIU Li², LIU Guoyou³, ZHOU Yang³, LIU Sheng¹, CHEN Zhiwen¹

1. School of Integrated Circuits, Wuhan University, Wuhan 430072, China; 2. School of Materials Science and Engineering, Wuhan University of Technology, Wuhan 430070, China; 3. State Key Laboratory of Advanced Power Semiconductor Devices (Zhuzhou CRRC Times Electric Co., Ltd.) Zhuzhou 412001, China; 4. Archimedes Semiconductor Ltd., Hefei 230088, China

Received:2025-08-03 Revised:2025-09-11 Online:2025-09-26 Published:2025-09-26

摘要/Abstract

摘要： 目前，在高压和低压功率电子应用中，硅基MOSFET和IGBT正分别占据主流。由于Si材料特性的限制性，新型功率器件不断涌现，如碳化硅、氮化镓等第三代宽禁带半导体材料及金刚石、氧化镓等超宽禁带半导体材料的新型器件。本文回顾了MOSFET、IGBT以及GaN HEMT三类功率电子器件的结构发展历程，综述了这三类器件朝向宽禁带半导体器件发展的结构进展，分析了各结构的设计特点及在击穿电压、热管理、开关特性等方面的提高，并讨论了方案利弊；最后，分别论述了其发展过程中遇到的问题，并对未来发展方向进行了展望。

关键词: 金属-氧化物半导体场效应晶体管（MOSFET）, 绝缘栅双极晶体管（IGBT）高电子迁移率晶体管（HEMT）, 功率电子器件, 宽禁带半导体器件

Abstract: Nowadays, Si-based MOSFETs and IGBTs are dominating in high-voltage and low-voltage power electronic applications, respectively. Due to the limitation of material properties of Si, new power devices are being developed, such as devices by the third-generation wide-bandgap semiconductor materials such as SiC and GaN, as well as ultra-wide bandgap semiconductor materials like diamond and Ga₂O₃. In this paper, the structural development of MOSFET, IGBT, and GaN HEMT is reviewed, it summarizes the structural progress of these three types of devices towards wide bandgap semiconductor devices, analyzes the design characteristics of each structure and the improvements in breakdown voltage, thermal management, switching characteristics, etc., and discusses the advantages and disadvantages of the schemes. Finally, the problems encountered in the process of their development are discussed separately, and the future direction of development is envisioned.

Key words: metal-oxide semiconductor field effect transistor (MOSFET), insulated gate bipolar transistors (IGBT), high electron mobility transistor (HEMT), power electronics, wide-bandgap devices

张家驹1, 闫闯1, 刘俐2, 刘国友3, 周洋4, 刘胜1, 陈志文1. 功率电子器件发展概述[J]. 电子与封装, doi: 10.16257/j.cnki.1681-1070.2026.0029.

ZHANG Jiaju1, YAN Chuang1, LIU Li2, LIU Guoyou3, ZHOU Yang3, LIU Sheng1, CHEN Zhiwen1. Review of the Structural Development of Power Electronics[J]. Electronics & Packaging, doi: 10.16257/j.cnki.1681-1070.2026.0029.

中国半导体行业协会封装分会会刊

中国电子学会电子制造与封装技术分会会刊

功率电子器件发展概述

Review of the Structural Development of Power Electronics

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