关键词: 光滑有限元法, 多物理场耦合, 绝缘栅双极型晶体管

Abstract: In the progression towards high power density in power electronic devices, packaging interconnect reliability emerges as a common bottleneck constraining their longevity and performance. This issue is particularly pronounced in Insulated Gate Bipolar Transistor (IGBT) modules operating under high-current conditions, where various reliability challenges become more severe. Utilizing numerical simulation to analyze failure mechanisms and optimize the design serves as a critical approach for enhancing the reliability. Among the various smoothed finite element methods (S-FEM) proposed in recent years, the edge-based smoothed finite element method (ES-FEM) has demonstrated superior accuracy, along with reduced sensitivity to mesh distortion and enhanced stability in time-domain analysis. By extending ES-FEM to multiphysics coupling simulation, a novel electro-thermo-mechanical simulation approach is proposed. The validity and efficiency of this new algorithm are verified through an IGBT module case study in comparison with the conventional finite element method (FEM). The study reveals that under identical mesh discretization, ES-FEM yields more accurate results than FEM. The methodology could be extended to various electronics packaging applications.

Key words: smoothed finite element method, multi-physics coupling simulation, insulated gate bipolar transistor