关键词: GaN功率器件, 器件级热管理, 金刚石衬底, 微通道冷却

Abstract: Third-generation wide-bandgap semiconductors represented by GaN (gallium nitride) possess excellent properties such as high electron mobility and high breakdown field strength. They are widely used in high-frequency and high-power devices; however, limited by the effective thermal management of the devices, the performance of current devices under high power has not been fully exerted. This paper discusses in detail the basic issues of thermal bottlenecks in GaN devices, and analyzes and reviews the key technologies applicable to GaN device thermal management in recent years. Ranging from the optimization of the internal structure of devices to external cooling, these technologies include diamond near-junction integrated thermal management technology and chip-level microchannel cooling technology. The paper elaborates on the key solutions and technical challenges encountered in the integrated thermal management of diamond and GaN, systematizes various design methods for GaN microchannel cooling, and provides a reference for the subsequent optimization and breakthrough of thermal management technologies.

Key words: GaN power devices, device-level thermal management, diamond substrate, microchannel cooling