关键词: GaN, 宽带, 结温高, 射频过激励, 输出失配, 可靠性

Abstract: GaN chips，with their notable advantages such as wide bandgap, high voltage tolerance, and high power density, have significantly enhanced the performance of broadband high-power amplifiers. However, alongside these performance improvements, GaN broadband high-power amplifiers are subjected to increased electrical and thermal stress, which affects their long-term reliability. This paper systematically analyzes and investigates reliability issues in the engineering application of GaN broadband high-power amplifiers, including drain voltage overshoot, high junction temperature, RF overdrive, and output mismatch, and proposes targeted improvement and enhancement measures.

Key words: GaN,  broadband, high junction temperature, output mismatch, reliability