关键词: 封装材料, 烧结纳米银, 大功率器件, 微观结构, 建模方法

Abstract: Sintered nanosilver, owing to its excellent thermal conductivity and high-temperature reliability, has emerged as a key interconnect material for the packaging of wide-bandgap semiconductor high-power devices. Its macroscopic properties are fundamentally governed by the microstructure formed during sintering, namely pores and grains. This paper systematically reviews the recent advances in microstructure modeling of sintered nanosilver. For the pore phase, high-fidelity reconstruction based on three-dimensional tomography, parametric geometric simplification based on shape factors, and statistical modeling based on Gaussian random fields are discussed in detail. For the grain phase, experimental data-driven modeling based on electron backscatter diffraction (EBSD) and parametric modeling strategies based on Voronoi tessellations are summarized. By coupling the pore and grain phases to construct a porous polycrystalline microstructure model, this approach provides a fundamental pathway for elucidating the thermo-mechanical-electrical properties and failure mechanisms, as well as establishing precise correlations among processing, structure, and properties. This review aims to provide theoretical insights and methodological guidance for performance optimization, reliability design, and large-scale application of sintered nanosilver.

Key words: packaging materials, sintered nanosilver, high-power devices, microstructure, modeling methods