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基于垂直电镀设备的铜凸块电沉积多物理场仿真与实验研究

张浩1,2,訚耀保1,毛超威2   

  1. 1. 同济大学机械工程与机器人学院,上海  201804;2. 晟盈半导体设备(江苏)有限公司,江苏 苏州  215100
  • 收稿日期:2026-06-15 修回日期:2026-07-30 出版日期:2026-08-18 发布日期:2026-08-18
  • 通讯作者: 张浩

Multiphysics Simulation and Experimental Study of Copper Pillar Bump Electrodeposition Based on Vertical Plating System

ZHANG Hao1,2, YIN Yaobao1, MAO Chaowei2   

  1. 1. School of Mechanical Engineering, Tongji University, Shanghai 201804, China; 2. Semiconductor Wet Advanced Technology Co., Ltd., Suzhou 215100, China
  • Received:2026-06-15 Revised:2026-07-30 Online:2026-08-18 Published:2026-08-18

摘要: 针对垂直式电镀设备中200 mm晶圆铜凸块电镀均匀性控制的难题,通过二次电流分布耦合电极壳方法,分析种子层电阻随电镀过程的动态过程,建立了基于COMSOL Multiphysics软件的电镀槽三维多物理场耦合模型。以不均匀度(NU%)作为晶圆上沉积厚度分布的评价指标,进行了实际电镀实验,仿真结果与实验结果一致。不均匀度仿真值为8.35%,实验值为9.17%,验证了模型的正确性。同时,进行了阳极屏蔽板孔分布及孔数量的不均匀度优化,仿真结果中不均匀度可降至5.52%;随后将优化后的屏蔽板进行进一步电镀实验验证,均匀性为6%,满足晶圆级电镀工艺要求。所建立的二次电流分布-电极壳耦合模型能准确预测铜凸块电镀的均匀性,分析结果可作为垂直式电镀设备研发和阳极屏蔽板工艺优化的理论依据。

关键词: 铜凸块, 均匀性, 垂直式电镀, COMSOL仿真, 阳极屏蔽板

Abstract: To address the challenge of uniformity control in copper pillar bump electrodeposition for 200 mm wafers in vertical plating equipment, a three-dimensional multiphysics coupled model of the plating cell was developed using COMSOL Multiphysics by employing the secondary current distribution coupled with the electrode shell, that considered the dynamic variation of seed layer resistance during the electrodeposition process. The non-uniformity (NU%) was adopted as the evaluation metric for the deposition thickness distribution on the wafer, actual electroplating experiments were conducted and the simulation results were consistent with the experimental results. The simulated NU% of 8.35%, while the experimental value was 9.17%, validating the accuracy of the model. Furthermore, the aperture distribution and the quantity on the anode shield plate was optimized, reducing the NU% to 5.52% in the simulation; subsequently, the electroplating experiments were carried out with the optimized shield plate, yielding a uniformity of 6%, which satisfies the wafer level plating specification. The model coupled with secondary current distribution–electrode shell can accurately predict the uniformity of copper pillar bump electroplating, and the analysis results can serve as the theoretical basis for the development of vertical plating system and the process optimization of the anode shield.

Key words: copper pillar bump, uniformity, vertical plating, COMSOL simulation, anode shield plate