3.3 V双向TVS器件浪涌防护失效分析与工艺优化设计

doi:10.16257/j.cnki.1681-1070.2027.005

电子与封装

• 材料、器件与工艺 • 下一篇

3.3 V双向TVS器件浪涌防护失效分析与工艺优化设计

黄龙¹，冯瑞龙²，王涛²

1. 中国电子科技集团公司第五十八研究所，江苏无锡 214035；2. 无锡中微晶园电子有限公司，江苏无锡 214035

收稿日期:2026-07-30 修回日期:2026-08-14 出版日期:2026-08-20 发布日期:2026-08-20
通讯作者: 黄龙

Surge Protection Failure Analysis and Process Optimization of 3.3 V bidirectional TVS Device

HUANG Long¹, FENG Reilong², WANG Tao²

China Electronics Technology Group Corporation No.58 Research Institute, Wuxi 214035, China; Wuxi KI Electronics Co., Ltd., Wuxi 214035, China

Received:2026-07-30 Revised:2026-08-14 Online:2026-08-20 Published:2026-08-20

摘要/Abstract

摘要： 3.3 V双向TVS器件因具备同时抑制正负双向浪涌脉冲的能力，在通信、汽车电子、消费电子等领域被广泛应用，但在浪涌脉冲防护过程中会因失效而降低防护等级。基于0.5 μm CMOS工艺制备3.3 V双向TVS器件，通过电性测试、解剖观察等手段分析了其在浪涌脉冲作用下的失效原因，提出了通过调整金属厚度工艺以提升器件浪涌防护能力的优化方案。实验结果表明，工艺优化后的3.3 V双向TVS器件最大浪涌电流提升17.3%，各项参数满足产品需求。

关键词: 金属工艺, 浪涌防护, TVS

Abstract: 3.3 V bidirectional TVS devices are widely applied in communication, automotive electronics, consumer electronics due to their excellent capability to suppress both positive and negative surge pulses. However, surge-induced device failure degraded the device protection performance. 3.3 V bidirectional TVS device was fabricated via the 0.5 μm CMOS process. The failure mechanisms of the device under surge pulses were systematically analyzed through electrical tests and physical failure observations. Metal layer thickness optimization scheme is proposed to enhance the device’s surge protection capability. Experimental results show that the maximum surge current of the optimized device is increased by 17.3%, and all parameters satisfied the product requirements.

Key words: metallization process, surge protection, TVS

黄龙1, 冯瑞龙2, 王涛2. 3.3 V双向TVS器件浪涌防护失效分析与工艺优化设计[J]. 电子与封装, doi: 10.16257/j.cnki.1681-1070.2027.005.

HUANG Long1, FENG Reilong2, WANG Tao2. Surge Protection Failure Analysis and Process Optimization of 3.3 V bidirectional TVS Device[J]. Electronics & Packaging, doi: 10.16257/j.cnki.1681-1070.2027.005.

中国电子学会电子制造与封装技术分会会刊

中国半导体行业协会封测分会会刊

无锡市集成电路学会会刊

3.3 V双向TVS器件浪涌防护失效分析与工艺优化设计

Surge Protection Failure Analysis and Process Optimization of 3.3 V bidirectional TVS Device

PDF

可视化

摘要/Abstract

引用本文

使用本文

参考文献

相关文章 1

编辑推荐

Metrics

本文评价