中国半导体行业协会封装分会会刊

中国电子学会电子制造与封装技术分会会刊

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电子与封装 ›› 2016, Vol. 16 ›› Issue (8): 34 -36. doi: 10.16257/j.cnki.1681-1070.2016.0095

• 电路设计 • 上一篇    下一篇

一种曲率补偿的高精度带隙基准源设计

吕江萍,胡巧云   

  1. 中国兵器工业第214研究所,江苏苏州 215163
  • 收稿日期:2016-05-04 出版日期:2016-08-20 发布日期:2016-08-20
  • 作者简介:吕江萍(1971—),男,安徽桐城人,高级工程师,从事半导体集成电路设计工作。

Design of a Bandgap Reference with Curvature Compensation

LV Jiangping,HU Qiaoyun   

  1. East China institute of photoelectric integrated device,Suzhou 215163,China
  • Received:2016-05-04 Online:2016-08-20 Published:2016-08-20

摘要: 基于CSMC 0.5 μm CMOS工艺,设计了一种带曲率补偿的低温漂带隙基准源。采用折叠式共源共栅放大器反馈结构带隙基准源,利用晶体管的VBE与IC的温度特性产生T1nT补偿量,对传统的带隙基准进行曲率补偿。仿真结果表明,在5 V供电电压下,-40~125℃温度范围内,基准电压的波动范围为1.2715~1.2720 V,温漂为3.0×10-6/℃,低频时电路电源抑制比为-86 dB。

关键词: 曲率补偿, 带隙基准, 折叠式共源共栅

Abstract: The paper proposes a design of a low temperature drift bandgap reference with curvature compensation in CSMC 0.5 μm CMOS process.The circuit adopts conventional bandgap voltage source with folded-cascode amplifier-feedback architecture and generates a T1nT compensation for conventional bandgap reference.Simulation results show that under the power supply voltage of 5 V and temperature range of-40℃to 125℃,the output reference voltage is of the range from 1.2715 V to 1.2720 V with a temperature coefficient about 3.0×10-6/℃and a low frequency power supply rejection ratio of-86 dB.

Key words: curvature compensation, bandgap reference, folded-cascode

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