基于双极型晶体管的温度传感器

doi:10.16257/j.cnki.1681-1070.2022.0903

电子与封装 ›› 2022, Vol. 22 ›› Issue (9): 090301 . doi: 10.16257/j.cnki.1681-1070.2022.0903

基于双极型晶体管的温度传感器

阳佳丽;赵新;高博;张析;龚敏

四川大学物理学院，成都 610065

收稿日期:2022-01-24 出版日期:2022-09-22 发布日期:2022-03-24
作者简介:阳佳丽（1996—），女，四川内江人，硕士研究生，主要从事模拟集成电路研究。

Temperature SensorBasedonBipolarJunction Transistor

YANG Jiali, ZHAO Xin, GAO Bo, ZHANG Xi, GONG Min

College of Physics, Sichuan University, Chengdu 610065, China

Received:2022-01-24 Online:2022-09-22 Published:2022-03-24

摘要/Abstract

摘要： 提出了一种基于双极型晶体管（BJT）宽温度范围的温度传感器。该温度传感器电路通过两个温度特性互补的电流产生一个高斜率的电压，采用电流增益补偿技术和斩波稳定技术来提高传感器输出电压的线性度，同时可通过合理调节电阻值和电流镜比例获得不同的输出电压。在0.18 μm HVCMOS工艺下对传感器进行仿真，结果表明，在－55~125 ℃温度范围内，温度传感器的温度系数为11.2 mV/℃，误差在-0.8~0.8 ℃。

关键词: 温度传感器, 电流增益补偿技术, 高斜率

Abstract: A temperature sensor based on bipolar junction transistor (BJT) with a wide temperature range is presented. The temperature sensor circuit generates a high-slope voltage through two currents with complementary temperature characteristics. The current gain compensation technique and chopper stabilization technique are used to improve the linearity of the sensor output voltage, while different output voltages can be obtained by reasonably adjusting the ratio of the resistor value and the current mirror. The sensor is simulated under the 0.18 μm HVCMOS process, and the result shows that the temperature coefficient of the sensor is 11.2 mV/℃ with an error of -0.8 to 0.8 ℃ in the temperature range of -55 to 125 ℃.

Key words: temperature sensor, current gain compensation technique, high-slope

中图分类号:

TN432

阳佳丽, 赵新, 高博, 张析, 龚敏. 基于双极型晶体管的温度传感器[J]. 电子与封装, 2022, 22(9): 090301 .

YANG Jiali, ZHAO Xin, GAO Bo, ZHANG Xi, GONG Min. Temperature SensorBasedonBipolarJunction Transistor[J]. Electronics & Packaging, 2022, 22(9): 090301 .

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中国半导体行业协会封装分会会刊

中国电子学会电子制造与封装技术分会会刊

基于双极型晶体管的温度传感器

Temperature SensorBasedonBipolarJunction Transistor

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