GaN基互补型逻辑电路的研究进展及挑战*

doi:10.16257/j.cnki.1681-1070.2023.0001

摘要/Abstract

摘要： 氮化镓（GaN）基异质结场效应晶体管具有工作频率高、导通损耗低等优点，已经开始广泛应用在多种高频、高效功率转换器中。为了充分发挥GaN功率器件的潜能，需要将功率开关器件和控制器、驱动等外围电路进行全GaN单片集成以减少寄生参数。互补型逻辑电路是实现集成的关键元电路之一，但其研究起步较晚。介绍了n沟道和p沟道GaN增强型器件的制备方案及互补逻辑电路的研究进展。从电学性能匹配性及稳定性出发探讨了现有互补型逻辑电路面临的关键科学问题，可以为GaN基互补型逻辑电路的研究提供参考。

关键词: GaN, 功率集成电路, 增强型器件, 互补金属-氧化物-半导体, 逻辑电路, 稳定性

Abstract: GaN-based heterojunction field effect transistors have the advantages of high operating frequency and low conduction loss, which have begun to be widely used in a variety of high frequency, high efficiency power converters. In order to fully utilize the potential of GaN power devices, the power switching devices and peripheral circuits such as controllers and drivers need to be fully GaN monolithically integrated to reduce parasitic parameters. The complementary logic circuit is one of the key elements to realize integration, but their research started late. The fabrication schemes of n-channel and p-channel GaN enhance devices and the research progress of complementary logic circuits are introduced. The key scientific problems for the existing complementary logic circuits are discussed from the perspective of electrical performance matching and stability, which can provide some reference for the research of GaN-based complementary logic circuits.

Key words: GaN, power integrated circuit, enhance device, complementary metal-oxide- semiconductor, logic circuit, stability

中图分类号:

TN432

张彤;刘树强;何亮;成绍恒;李柳暗;敖金平. GaN基互补型逻辑电路的研究进展及挑战^*[J]. 电子与封装, 2023, 23(1): 010101 .

ZHANG Tong, LIU Shuqiang, HE Liang, CHENG Shaoheng, LI Liu’an, AO Jinping. Research Progress and Challenges of GaN-BasedComplementary Logic Circuits[J]. Electronics & Packaging, 2023, 23(1): 010101 .

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中国半导体行业协会封装分会会刊

中国电子学会电子制造与封装技术分会会刊

GaN基互补型逻辑电路的研究进展及挑战^*

Research Progress and Challenges of GaN-BasedComplementary Logic Circuits

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